GaAs-Based Transverse Junction Superluminescent Diodes With Strain-Compensated InGaAs-GaAsP Multiple-Quantum-Wells at 1.1-mu m Wavelength

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Title:	GaAs-Based Transverse Junction Superluminescent Diodes With Strain-Compensated InGaAs-GaAsP Multiple-Quantum-Wells at 1.1-mu m Wavelength
Authors:	Guol,SH;Chou,MG;Yang,YJ;Sun,CK;Shi,JW
Contributors:	電機工程學系
Keywords:	LIGHT-EMITTING-DIODES;OPTICAL COHERENCE TOMOGRAPHY
Date:	2010
Issue Date:	2012-03-28 10:11:43 (UTC+8)
Publisher:	國立中央大學
Abstract:	In this study, we demonstrate a transverse junction superluminescent diode (TJ-SLD) with an engagement of chirped In(x)Ga(1-x)As-GaAs(0.9)P(0.1) strain-compensated multiple-quantum-wells (SC MQWs) at 1.1-mu m wavelength. The problem relative to inhomogeneous carrier distribution in each QW, which is a problem in traditional vertical junction SLDs (VJ-SLDs), can be effectively minimized by utilizing the benefit of lateral carrier injection in TJ devices. Our demonstrated device offers significant improvements in threshold current, output power, and optical bandwidths compared to TJ-SLD without SC MQWs. Furthermore, compared with the high-performance similar to 1-mu m VJ-SLDs, this novel device exhibits a comparable output power and 3-dB bandwidth performance with a more stable electroluminescence spectrum, which varies only negligibly under a wide range of bias current.
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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