Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

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题名:	Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors
作者:	Lin,HK;Lin,YC;Huang,FH;Fan,TW;Chiu,PC;Chyi,JI;Ko,CH;Kuan,TM;Hsieh,MK;Lee,WC;Wann,CH
贡献者:	電機工程學系
关键词:	IMPACT IONIZATION;PERFORMANCE
日期:	2010
上传时间:	2012-03-28 10:11:44 (UTC+8)
出版者:	國立中央大學
摘要:	Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at V(DS) = 0.5 V and I(D) = 100 mA/mm, and gate leakage to 1 x 10(-3) mA/mm from 4 at V(GS) = -1.2 V and V(DS) = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression. (C) 2010 Elsevier Ltd. All rights reserved.
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[電機工程學系] 期刊論文

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