Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51985

Title:	Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode
Authors:	Lin,SY;Tseng,CC;Lin,WH;Mai,SC;Wu,SY;Chen,SH;Chyi,JI
Contributors:	電機工程學系
Date:	2010
Issue Date:	2012-03-28 10:12:36 (UTC+8)
Publisher:	國立中央大學
Abstract:	A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blueshift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs heterostructures. Significant electroluminescence (EL) is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blueshift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures. A model is established to explain the operation mechanisms of the type-II QD LED.
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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