Thermal Rectification Effects of Multiple Semiconductor Quantum Dot Junctions

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题名:	Thermal Rectification Effects of Multiple Semiconductor Quantum Dot Junctions
作者:	Kuo,DMT
贡献者:	電機工程學系
日期:	2010
上传时间:	2012-03-28 10:12:59 (UTC+8)
出版者:	國立中央大學
摘要:	On the basis of the multiple-energy-level Anderson model, we theoretically study the thermoelectric effects of semiconductor quantum dots (QDs) in the nonlinear response regime. The charge and heat currents in the sequential tunneling process are calculated by Keldysh Green's function technique. The thermal rectification effect can be observed for such a multiple QD junction system, whereas the rectification efficiency is significantly affected by the tunneling rate, size fluctuation, and location distribution of QDs. We also find that the charge current rectification with respect to temperature bias can be observed. (C) 2010 The Japan Society of Applied Physics
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS
显示于类别:	[電機工程學系] 期刊論文

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