Development of InAs/AlSb HEMTs Using Pre-Passivated as-Grown Epitaxies

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題名:	Development of InAs/AlSb HEMTs Using Pre-Passivated as-Grown Epitaxies
作者:	Lin,HK;He,WZ;Ho,HC
貢獻者:	電機工程學系
關鍵詞:	FIELD-EFFECT TRANSISTORS;IMPACT IONIZATION;QUANTUM-WELLS;SUPPRESSION;TRANSPORT
日期:	2011
上傳時間:	2012-03-28 10:14:17 (UTC+8)
出版者:	國立中央大學
摘要:	This work proposes a two-step scheme approach for passivating InAs/AlSb high-electron-mobility transistors (HEMTs) and demonstrates increased output currents and transconductances, reduced off-state leakages, improved subthreshold behaviors, suppressed surface trapping effect, and elevated frequency performance in optical gate devices. These enhancements depend primarily on the pre-passivation of as-grown InAs/AlSb device epitaxies ahead of starting device fabrication using typical plasma-enhanced chemical vapor deposition (PECVD) SiO(2) dielectrics. The pre-passivants improve dielectric-epitaxy interface quality and protect the underlying InAs/AlSb epitaxies from chemical attacks by subsequent processing. No additional process step is required to prepare the surface for passivation. The two-step passivation scheme is finally applied to submicron e-beam T-gate devices and its feasibility for high-frequency applications is successfully demonstrated. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3622848] All rights reserved.
關聯:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
顯示於類別:	[電機工程學系] 期刊論文

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