High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

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题名:	High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers
作者:	Liu,WS;Wu,HM;Liao,YA;Chyi,JI;Chen,WY;Hsu,TM
贡献者:	電機工程學系
关键词:	CHEMICAL-VAPOR-DEPOSITION;LASER;DEPENDENCE;EMISSION;GROWTH;SIZE
日期:	2011
上传时间:	2012-03-28 10:14:45 (UTC+8)
出版者:	國立中央大學
摘要:	This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5 x 10(10) cm(-2) with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV. (C) 2010 Elsevier B.V. All rights reserved.
關聯:	JOURNAL OF CRYSTAL GROWTH
显示于类别:	[電機工程學系] 期刊論文

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