English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 41262180      線上人數 : 116
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/52100


    題名: SETBIST: An Soft-Error Tolerant Built-In Self-Test Scheme for Random Access Memories
    作者: Tseng,TW;Li,JF
    貢獻者: 電機工程學系
    關鍵詞: DESIGN;BIST;CHALLENGES;SYSTEMS
    日期: 2011
    上傳時間: 2012-03-28 10:15:27 (UTC+8)
    出版者: 國立中央大學
    摘要: Variability in transistor performance will continue to increase with the scaling of technology. Transistors are more and more unreliable. Also, the noise-tolerant capability of circuits is less and less robust. To avoid the loss of yield and fault coverage, the design-for-testability circuit must be designed to be noise-tolerant. This paper presents a soft-error tolerant built-in self-test (SETBIST) design for random access memories (RAMs). Some soft-error-mitigation (SEM) techniques are proposed to enhance the soft-error immunity of the instruction register, March operation generator, address generator, and data background generator. Experimental results show that the area overhead of the SETBIST is only about 1.1% for an 8K x 64-bit SRAM. Analysis results show that the SETBIST can effectively tolerate soft errors. We also use FPGA demonstration board to verify the SETBIST scheme.
    關聯: JOURNAL OF INFORMATION SCIENCE AND ENGINEERING
    顯示於類別:[電機工程學系] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML310檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明