Zn-Diffusion InAs Photodiodes on a Semi-Insulating GaAs Substrate for High-Speed and Low Dark-Current Performance

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題名:	Zn-Diffusion InAs Photodiodes on a Semi-Insulating GaAs Substrate for High-Speed and Low Dark-Current Performance
作者:	Shi,JW;Kuo,FM;Huang,BR
貢獻者:	電機工程學系
關鍵詞:	EPITAXY;NOISE
日期:	2011
上傳時間:	2012-03-28 10:15:56 (UTC+8)
出版者:	國立中央大學
摘要:	We demonstrate Zn-diffusion InAs-based high-speed photodiodes (PDs) fabricated on semi-insulating (S. I.) GaAs substrates. The Zn-diffusion profile in our PDs is used to minimize the influence of the surface-state on the dark current, which is an issue for small (high-speed) InAs PDs with a large surface-to-volume ratio. Compared to control without Zn-diffusion, our device exhibits a much lower dark current. In addition, as compared to the performance reported for InAs PDs on conductive InAs substrates, our PDs on S. I. substrates demonstrate a lower parasitic capacitance and have a superior capability for being integrated with other microwave components. The measured optical-to-electrical (O-E) bandwidth of our device can be as wide as 20 GHz with a reasonable dark current density (similar to 50 A/cm(2)) at room temperature. Based on our modeling results, the measured bandwidths are limited by the internal electron drift/diffusion time due to the intervalley scattering effect under 1.55-mu m wavelength excitation.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
顯示於類別:	[電機工程學系] 期刊論文

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