利用ECR-CVD成長氫化氧化矽薄膜之研製與應用;The study and application of SiO:H thin-film by ECR-CVD

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題名:	利用ECR-CVD成長氫化氧化矽薄膜之研製與應用;The study and application of SiO:H thin-film by ECR-CVD
作者:	吳明晏;Ming-Yen Wu
貢獻者:	光電科學研究所
關鍵詞:	ECR-CVD;氫化氧化矽薄膜;SIO;ECR
日期:	2012-01-04
上傳時間:	2012-06-15 20:12:13 (UTC+8)
摘要:	本研究以電子迴旋氣相沉積法(ECR-CVD)來討論氫化氧化矽(SiOX:H)薄膜的特性與在矽晶異質介面太陽電池上的應用。ECR-CVD 屬於高電漿密度的薄膜沉積製程設備，主要是以磁場內的電子迴轉角頻率和入射微波頻率相同產生共振時的能量吸收轉化來使製程氣體解離產生高密度電漿。ECR-CVD相較於傳統的PE-EVD有沉積速率較快速、低離子轟擊、無電極汙染、較高的氣體使用率…等優勢。此研究將分析利用ECR-CVD所致製備之SiOX:H薄膜的光學能隙、可見光之穿透率、薄膜之氧含量、光敏感度…等性質，並詳細敘述氫化氧化矽薄膜中氧含量將如何影響其光電特性。最後再將SiOX:H薄膜研究結果應用在HJ太陽電池上，並針對氫氣和B2H6兩項參數做優化，得到其太陽電池的轉換效率(η)=8.19%；開路電壓(Voc) =530.5mV；短路電流(Jsc)=25.87；填充因子( FF)=59.68%The study in this paper is to research the characteristics of hydrogen silicon oxygen(SiOX:H) fabricated by electron cyclotron resonance chemical vapor deposition (ECR-CVD) and its application on heterojunction solar cells(HJ solar cells). ECR-CVD is belong to a high density plasma deposition equipment, the high density plasma is generated by the source gas absorb the energy form the resonance when angular frequency and microwave was in the same frequency. Compare with PE-CVD , the advantage of ECR-CVD such like high plasma density, low ion temperature, the faster deposition rate, low ion bombardment, low operating pressure. Furthermore , the study will discuss the energy band gap, transmittance, Oxygen-content, and photo sensitivity of the SiOX:H. Finally, we will use the result of the research of SiOX:H thin-film on the HJ solar cells, and there we have the Electro-optic convert efficiency 8.19%, the open-circuit voltage (VOC) = 0.530 V, short-circuit current density (JSC) = 0.026 A/cm2,and the fill factor (FF) = 59.68%.
顯示於類別:	[光電科學研究所] 博碩士論文

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