以RTP硒化法探討CIS薄膜及元件特性之研究;Investigation of CuInSe2 thin films and solar cells prepared by rapid selenization process

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題名:	以RTP硒化法探討CIS薄膜及元件特性之研究;Investigation of CuInSe2 thin films and solar cells prepared by rapid selenization process
作者:	彭萬軒;Peng,Wan-Hsuan
貢獻者:	光機電工程研究所
關鍵詞:	快速熱處理;銅銦硒薄膜;硒化法;RTP;selenization;CIS thin films
日期:	2012-07-28
上傳時間:	2012-09-11 18:12:08 (UTC+8)
出版者:	國立中央大學
摘要:	本論文以硒化法來製備CIS薄膜，在製備銅銦金屬前驅物薄膜部分，分別使用了三個不同元素比例的銅銦合金靶材，其銅與銦之原子百分比分別為9:11 at% (Cu/In≒0.82)、1:1 at% (Cu/In=1)、11:9 at% (Cu/In≒1.22)進行比對研究，鍍製成銅銦金屬前驅物薄膜的原子比例分別是0.77、0.88、1.27。Se的來源為熱蒸鍍一層Se薄膜在銅銦金屬前驅物上面，再搭配二階段RTP硒化製程，使得CIS薄膜可快速完成硒化反應。本論文著重於研究不同原子比例的銅銦前驅物薄膜與其製作成CIS薄膜之特性，實驗結果發現，只有0.88比例的銅銦前驅物薄膜才能製作出完整且可堆疊成元件的CIS薄膜，此結果受到薄膜之晶相以及組成比例的影響。以SLG基板/Mo/p-CIS/CdS/ZnO/AZO結構為元件，並進行效率量測。元件在大氣環境下加熱至150oC，時間維持30分鐘之退火過程，效率較未退火前的元件(0.35%)提升不少(0.8%)；但元件經過第二次退火加熱至200oC，時間維持30分鐘後，效率反而下降(0.26%)，甚至較未退火前的元件還低。由實驗證實，元件經過溫度150 oC，時間30分鐘之退火條件，可使元件效率提升。In this thesis, CIS thin films were prepared by selenization method. The research used three different element ratio of Cu-In alloy target for deposition of copper-indium metal precursor, they were 9:11 at%,1:1 at%, 11:9 at% and the corresponding precursor films with Cu/In ratios of 0.77, 0.88, 1.27, respectively. The Se layer was evaporated on top of the precursor films and the CIS thin films were accomplished by using two-stage RTP process. This research investigated the characteristics of different atomic ratio of copper-indium metal precursor films and CIS solar cells. It was found that only Cu/In ratio 0.88 of precursor film was suitable to fabricate the CIS thin film and solar cell, this result was affected by crystal phase and Cu/In ratios of the precursor films.And this thesis used the soda-lime glass(SLG) substrates to manufacture SLG/Mo/p-CIS/CdS/ZnO/AZO thin film solar cell. The performance was measured before and after sequence of post-annealing treatment in the atmospheric environment. In this thesis, conditions of first post-annealing treatment on CIS cell was 150oC with 30min holding time, then second post-annealing treatment was 200oC with 30min holding time.The I-V curve results show that post-annealing treatment could significantly improve the short-circuit current, fill factor and conversion efficiency (form 0.35% to 0.85%) at temperature of 150oC for 30min, but the open-circuit voltage short-circuit current, fill factor and efficiency (form 0.85% to 0.26%) at temperature of 200oC for 30min.
顯示於類別:	[光機電工程研究所 ] 博碩士論文

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