使用電子迴旋共振化學氣相沉積製備異質接面太陽能電池表面鈍化氫化非晶矽薄膜之製程參數研究; Surface passivation layer of α-Si:H thin films from process parameters study in HIT solar cell was prepared by ECR-CVD

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题名:	使用電子迴旋共振化學氣相沉積製備異質接面太陽能電池表面鈍化氫化非晶矽薄膜之製程參數研究;Surface passivation layer of α-Si:H thin films from process parameters study in HIT solar cell was prepared by ECR-CVD
作者:	張善淵;Chang,Shan-yuan
贡献者:	能源工程研究所
关键词:	氫化非晶矽;表面鈍化;光放射光譜儀;電子迴旋共振;化學氣相沉積;載子生命週期;hydrogenated amorphous silicon;surface passivation;Optical Emission Spectroscopy(OES);Electron Cyclotron Resonance(ECR);Chemical Vapor Deposition(CVD);carrier lifetime
日期:	2013-07-05
上传时间:	2013-08-22 12:03:24 (UTC+8)
出版者:	國立中央大學
摘要:	本研究使用電子迴旋共振化學氣相沉積製備異質接面太陽能電池表面鈍化氫化非晶矽薄膜之製程參數，調變的參數為微波功率、壓力、磁場共振位置、溫度及氫稀釋濃度比。製程過程中輔以光放射光譜儀(OES)監測電漿物種變化，並搭配FTIR、拉曼光譜儀、橢圓偏光儀來探討薄膜的結構特性，最後以Photoconductance lifetime tester判斷鈍化效益的好壞。經由實驗可得，考慮到電子密度及電子溫度的影響因此製程壓力選用5mtorr最為恰當；至於功率可選用低功率500W；溫度方面，製程溫度以300℃為佳；綜合以上參數，可於磁場組態40/12/22、氫稀釋比0.2、厚度20nm下獲得品質穩定的非晶矽鈍化薄膜。經過退火270 ?C-120s後數載子生命週(Lifetime)從523.79μsec提升至1.18msec；Implied Voc從626.48mV提升至657.48mV；R從0.2下降到0.18；氫含量32.7%降至31.6%。 Surface passivation layer of hydrogenated amorphous silicon thin films (α-Si:H) in heterojunction with intrinsic thin layer (HIT) solar cell was prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). The process parameters effects on films of surface passivation were investigated. In this study, the Optical Emission Spectroscopy (OES) has been used as a tool for analyzing the plasma spectrum and tried to find out the relationship to the deposition properties under varying process settings such as microwave power, pressure, magnetic field resonance position, temperature, and dilution ratio. The thin film properties were analyzed by Fourier transform infrared spectroscopy, Raman spectroscopy, and Ellipsometry. The surface passivation quality was determined by photo-conductance lifetime tester. The result showed that the stable and high quality of passivated amorphous silicon thin films could be obtained under the parameters of including thickness of 20nm, dilution ratio of 0.2, microwave power of 500W, substrate temperature of 300℃, pressure of 5mTorr and magnetic field configuration are of 40A, 12A and 22A which represents main coil, inner coil and outer coil current respectively. The thin film properties could be optimized after annealing process under the temperature 270 ?C for 120sec. The lifetime of passivated amorphous silicon thin films increased from 523.79μsec to 1.18msec, the implied Voc increased from 626.48mV to 657.48mV, the microstructure parameter (R) decreased from 0.2 to 0.18, and the hydrogen content (CH) decreased from 32.7% to 31.6%.
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