應用於投射電容式觸控面板之良率增強技術; Yield-Enhancement Techniques forProjected Capacitive Touch Panels

NCUIR > College of Electrical Engineering & Computer Science > Executive Master of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/61127

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/61127

Title:	應用於投射電容式觸控面板之良率增強技術;Yield-Enhancement Techniques forProjected Capacitive Touch Panels
Authors:	廖偉勛;Liao,Wei-Hsun
Contributors:	電機工程學系在職專班
Keywords:	觸控面板
Date:	2013-07-25
Issue Date:	2013-08-22 12:12:41 (UTC+8)
Publisher:	國立中央大學
Abstract:	在觸控面板技術快速發展的現今，觸控面板線路的設計與製程技術，決定產品良率與生產成本的關鍵。本論文針對投射電容式觸控面板金屬導線的光罩設計與製程技術，提出補償設計與製程改善之方案。在論文第一部分，我們提出避免金屬導線被刮傷或斷線的PI(passivation insulator) Half-Tone光罩設計方案。利用調整光罩上遮光圖案的寬度與相對間距，讓曝光能量適當穿過光罩，使玻璃上所塗佈的光阻形成不同寬度與不同深度的PI溝渠圖形，經由光學顯微鏡的檢查挑選出符合金屬導線規格的PI溝渠圖形，使後續的製程將金屬導線埋藏其中，達到保護金屬導線的有效功能，大幅減少金屬導線因為刮傷所造成的功能性故障問題。在論文第二部分，我們提出金屬導線製程良率的改善方案。利用OPC (optical proximity correction)技術在金屬導線層光罩上補償金屬導線的CD(critical dimension)損失值。然後在利用過度曝光與過度顯影的製程將金屬導線觸控線路埋置於PI溝渠絕緣保護層中，減少因為製造過程中造成觸控面板金屬導線斷線與刮傷的良率損失。此項方法可以提升金屬導線的製程良率。使用此方法將可減少研發費用，並能使產品快速導入量產與節約成本。 With the rapid development of touch panel technology, the design and process technologies of touch panel circuitry have become the keys to production yield rate and manufacturing cost. In this thesis the plans for compensation design and process improvement have been proposed with respect to the photomask design and process technology of metal jumper wires of projected capacitive touch panel. A PI (passivation insulator) half-tone photomask design will be proposed in the first section to avoid scratched or broken metal jumper wires. The widths and pitches of photomask patterns will be adjusted to allow sufficient exposure light to penetrate through the photomask and to result in PI trenches with different widths and depths on the PI pattern. In the second section, a plan for improving the production yield rate of metal jumper wires will be proposed by incorporating OPC (optical proximity correction) on the metal jumper wire photomask to compensate the metal jumper wire CD (critical dimension) loss. Utilizing over-exposure and over-development fabrication processes, the conductive metal jumper wire can be embedded into the protective PI layers in order to reduce the loss of production yield rate due to wire scratch damage and breakage during the manufacturing process. With this method the production yield rate of the metal jumper wires can be improved, and the R&D costs can be reduced in order to achieve the rapid mass production and cost reduction of such product.
Appears in Collections:	[Executive Master of Electrical Engineering] Electronic Thesis & Dissertation

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