成長於6吋矽基板之氮化鎵功率元件(1/3);GaN Power Devices Grown on 6 Inch Silicon Substrate(1/3)

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题名:	成長於6吋矽基板之氮化鎵功率元件(1/3);GaN Power Devices Grown on 6 Inch Silicon Substrate(1/3)
作者:	綦振瀛
贡献者:	國立中央大學電機工程學系
关键词:	電子電機工程;化學工程;材料科技
日期:	2012-12-01
上传时间:	2014-03-17 14:18:07 (UTC+8)
出版者:	行政院國家科學委員會
摘要:	研究期間：10106~10205;GaN power devices exhibit superior performance over their Si counterparts in terms of energy efficiency and high temperature operation. However, current GaN devices, which are mainly grown on sapphire substrates, are still too expensive to compete in the market. This has thus prompted a great deal of interests in developing metal-organic chemical vapor deposition (MOCVD) technology to grow GaN on large size Si substrates. In this proposal, we aim at high power GaN Schottky barrier diodes (SBDs) and normally-off GaN metal-insulator-semiconductor field-effect transistors (MIS FETs) that are grown on 6 inch Si substrates by our newly installed MOCVD system. Combining the efforts of device simulation and fabrication process development, we shall realize GaN power devices that fulfill the needs of new applications so as to create new business opportunities for the industry
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
显示于类别:	[電機工程學系] 研究計畫

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