利用二維元件數值模擬及推導解析公式來探討Junctionless MOSFET;Junctionless Mosfet Analysis by 2-Dimensional Device Simulation and Analytical-Model Development

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 研究計畫 > Item 987654321/63066

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题名:	利用二維元件數值模擬及推導解析公式來探討Junctionless MOSFET;Junctionless Mosfet Analysis by 2-Dimensional Device Simulation and Analytical-Model Development
作者:	蔡曜聰
贡献者:	國立中央大學電機工程學系
关键词:	電子電機工程
日期:	2012-12-01
上传时间:	2014-03-17 14:18:12 (UTC+8)
出版者:	行政院國家科學委員會
摘要:	研究期間：10108~10207;This project proposes to study the device operation of the junctionless MOSFET. The n-p-n structure is necessary from source to drain in the traditional n-channel MOSFET. There are two junctions from source to drain. However, the n-p-n structure is replaced by n-n-n structure from source to drain in the junctionless n-channel MOSFET. The junctionless MOSFET is capable of showing a good I-V characteristic. We will refer to reference papers to compare the traditional MOSFET and the junctionless MOSFET. Especially, there may be two types of current together in the junctionless MOSFET. One is the bulk current, the other is the accumulation current at the SiO2-Si interface. (I = I_bulk + I_accumulation), This project will help the researchers learn more device physics, and help our industry significantly.
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
显示于类别:	[電機工程學系] 研究計畫

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