於壓縮應變矽/矽鍺上成長應用於電子元件之金屬矽/鍺化物及臨場觀測之研究;Investigation and in-situ observation on the growth of silicide/germanide on the compressively strained Si and SiGe

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題名:	於壓縮應變矽/矽鍺上成長應用於電子元件之金屬矽/鍺化物及臨場觀測之研究;Investigation and in-situ observation on the growth of silicide/germanide on the compressively strained Si and SiGe
作者:	辛正倫
貢獻者:	國立中央大學電機工程學系
關鍵詞:	電子電機工程
日期:	2012-12-01
上傳時間:	2014-03-17 14:18:25 (UTC+8)
出版者:	行政院國家科學委員會
摘要:	研究期間：10109~10207;For the technological advancement of metal-oxide-semiconductor field effect transistor (MOSFET) in the microprocessor, the application of stress on the inversion channel has been conducted for better performance like higher electron/hole mobility, higher drain current and low threshold voltage. For the example of NMOS, the tensile stress was applied by high temperature deposition of the low-thermal-expansion-coefficient silicon nitride thin film on the top while silicon germanium epitaxial source/drain was adopted for the PMOS to compress the channel region. The role of stress on the device structure and materials characteristic has become more important on the contemporary 32/28 generation with the miniaturization and diversification of the device. The performance of the device will be dominant by the processing and the quality of the materials during the fabrication. In the future development, the interaction and relation of each material should be well understood and realized to integrate with fabrication and process flow in order to develop and incorporate new material. For this reason, recent research directions have been carried out toward observation of novel properties of materials and devices. Metal silicides have been widely used in the microelectronics as the source/drain contact region and it is believed to be irreplaceable. The percentage of the contact region has become larger in the MOSFET with the shrinkage of the gate length. This also means that the importance of the metal silicide would be more significant in the nanodevice. Furthermore, with the application of stress, germanium and nanowire transistor, the influence of metal silicide on the contact resistance would be more prominent with new manufacturing process. In situ study of the phase transformation, structural and chemical evolution of materials is important for understanding the structure and stability. Transmission electron microscopy (TEM), one of the most powerful tools for materials characterizing, is essential for nanotechnology. Beyond that, in situ TEM is a technique that allows a real time observation of in atomic scale with the capability of structural analysis, clear contrast and information acquisition. Since 2011, the utilization of the in situ TEM has been beneficial in studying the fundamental mechanisms of solid state reactions, structural evolution and growth kinetics. Decent research results were also presented in the most prestigious international journals in observing dynamic processes in nanoscale by in situ TEM. For future researches, detailed and essential topics will be conducted through cooperation to reveal the scientific solutions. As the critical dimensions for devices become smaller, it is necessary to precisely specify device geometry and control in atomic scale is essential. Achieving this level of control requires a detailed understanding of fundamental processes. State-of-the-art and important materials systems, such as silicon-germanium, silicide as well as germanide will be the research topics. Through these observations of transport, phase change and in situ growth, we can understand the mechanisms and model for industry processes. The research will be conducted with two sub-topics through microelectronics fabrication process and in situ TEM investigations. The emphases will be placed on the following topics, 1. Effect of surface stress of Si bicrystals on the growth of metal silicide. 2. Investigation on the growth of novel metal silicide/germanide on compressive strained silicon-germanium nanowires.
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
顯示於類別:	[電機工程學系] 研究計畫

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