研究期間：10108~10207;With the continuous increase in transistor count and clock frequency, the power density of current Si integrated circuits has reached a level that requires a revolutionary change in transistor technology. Among the candidates in the ball park, III-V compound semiconductor devices are considered most feasible. This three-year project aims at monolithic integration of Sb-based CMOS FinFETs on Si. In the first year, epitaxial growth of Sb-based heterostructures, interface of hgh-k dielectrics on antimonides, and planar InAs high electron mobility as well as InGaSb high hole mobility MOSFETs will be investigated. In the second year, technologies for nano-scale FinFETs and CMOS FETs will be developed. In the third year, Monolithic integration of III-V CMOS FinFETs will be realized on Si substrate. Novel devices, such as nano-wire type MOSFETs, will also be explored.
