整合於矽基板上之高遷移率三五族互補式金氧半鰭式場效電晶體;High Mobility III-V CMOS FINFETs on Si

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 研究計畫 > Item 987654321/63162

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题名:	整合於矽基板上之高遷移率三五族互補式金氧半鰭式場效電晶體;High Mobility III-V CMOS FINFETs on Si
作者:	綦振瀛
贡献者:	國立中央大學電機工程學系
关键词:	電子電機工程
日期:	2013-12-01
上传时间:	2014-03-17 14:20:29 (UTC+8)
出版者:	行政院國家科學委員會
摘要:	研究期間：10208~10307;With the continuous increase in transistor count and clock frequency, the power density of current Si integrated circuits has reached a level that requires a revolutionary change in transistor technology. Among the candidates in the ball park, III-V compound semiconductor devices are considered most feasible. This three-year project aims at monolithic integration of Sb-based CMOS FinFETs on Si. In the first year, epitaxial growth of Sb-based heterostructures, interface of hgh-k dielectrics on antimonides, and planar InAs high electron mobility as well as InGaSb high hole mobility MOSFETs will be investigated. In the second year, technologies for nano-scale FinFETs and CMOS FETs will be developed. In the third year, Monolithic integration of III-V CMOS FinFETs will be realized on Si substrate. Novel devices, such as nano-wire type MOSFETs, will also be explored.
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
显示于类别:	[電機工程學系] 研究計畫

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