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| 題名: | AlN, Al2O3,Al應用於LED散熱基板之壽命推估研究;The study of estimate life of LED modules on the AlN, Al2O3 and Al substrates. |
| 作者: | 林辰峰;Lin,Chen-feng |
| 貢獻者: | 光電科學與工程學系 |
| 關鍵詞: | 流明維持率;氮化鋁基板;氧化鋁基板;鋁基板;IES LM-80;IES LM-79;Lumen maintenance;IES TM-21;aluminum nitride substrate;alumina substrate;aluminum substrate |
| 日期: | 2014-07-25 |
| 上傳時間: | 2014-10-15 14:41:48 (UTC+8) |
| 出版者: | 國立中央大學 |
| 摘要: | 摘要
本研究主要是建立使用氮化鋁基板、氧化鋁基板、鋁基板LED模組其流明維持率之推估壽命模型，參考IES LM-80-08光源流明維持率量測方法，取氮化鋁基板、氧化鋁基板、鋁基板三種樣品，每種樣品各10個，放置於55及85度環境之下，採用IES LM-79-08 發光二極體光源電氣和光度特性量測方法，每1000小時記錄樣品流明維持率，直到6000小時；所得數據再利用IES TM-21-11預估二極體光源流明維持率進行LED模組壽命預測。結果建立LED模組三種不同基板的推估壽命模型，其結果日後可以運用於原位溫度測量試驗(ISTMT)合併內插法進行整體照明系統壽命之推估。
三種基板曲線擬合後L70(6K)數據結果，在55°C時AlN基板以36642小時領先，Al2O3基板以27116 h次之，Al基板以26932 h居後；在85°C時Al2O3基板以5422 h領先，AlN基板以5379 h次之，Al基板以5035 h居後。
溫度數據內插70 °C結果，AlN基板為13724 h、Al2O3基板為11886 h、Al基板為11401 h。
;This study is to establish the aluminum nitride substrate, the alumina substrate and the aluminum substrate LED module to estimate its lumen maintenance of life model. Refer to IES LM-80-08 lumen maintenance light measurement methods. The aluminum nitride substrates, alumina substrates, aluminum substrates, each type for 10 pcs, placed under 55 and 85 degrees environment. Using the IES LM-79-08 light emitting diodes electrical and photometric characteristics measuring method, every 1000 hours recording lumen maintenance until 6000 hours. The resulting data use IES TM-21-11 estimate diode light source LED lumen maintenance performed life prediction module. LED modules to build three different models to estimate the life of the substrate, and the results can be applied in future in situ temperature measurement test (ISTMT) combined interpolation method to estimate the overall life of the lighting system.
The result of curve fitting L70(6K)：At 55 °C, AlN substrate is 36,642 hours, Al2O3 substrate is 27116 h, Al substrate is 26932 h, At 85 °C, Al2O3 substrate is 5422 h, AlN substrate is 5379 h, Al substrate is 5035 h.
Data interpolating the temperature 70 ° C results, AlN substrate is 13724 h, Al2O3 substrate is 11886 h, Al substrate is 11401 h. |
| 顯示於類別: | [光電科學研究所] 博碩士論文
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