氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光檢測器之研究;AlGaN/GaN heterojunction metal-semiconductor-metal photodetector

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6647

Title:	氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光檢測器之研究;AlGaN/GaN heterojunction metal-semiconductor-metal photodetector
Authors:	黃庭文;Ting-Wen Huang
Contributors:	光電科學研究所
Keywords:	蕭特基接觸;光檢測器;異質接面;氮化鋁鎵;氮化鎵;heterojunction;AlGaN;GaN;Photodetector
Date:	2002-06-29
Issue Date:	2009-09-22 10:24:50 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本論文係利用有機金屬氣相沉積技術分別成長氮化鋁鎵/氮化鎵階變與漸變異質接面結構試片，對試片做X-射線繞射，霍爾量測等基本特性量測，與製作蕭特基二極體量測金屬與試片接觸的蕭特基位障及理想因子，最後製作金屬-半導體-金屬光偵測器。量測元件暗電流、照光電流響應及光頻譜響應等特性，並使用光學傳輸矩陣計算光通過元件的反射、穿透及吸收等參數，計算元件量子效率，同時分析其特性差異成因。The Schottky type metal-semiconductor-metal (MSM) ultraviolet Photodetectors based on GaN/AlGaN heterostructure material systems are reported. The Schottky contacts were made with Au metal. The dark and illuminated current-voltage characteristics were studied.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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