正負偏壓溫度不穩定性對鍺及三五族鮨狀場效電晶體靜態隨機存取記憶體之影響;Impacts of NBTI and PBTI on the Ge and III-V FinFET SRAM

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/67826

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/67826

Title:	正負偏壓溫度不穩定性對鍺及三五族鮨狀場效電晶體靜態隨機存取記憶體之影響;Impacts of NBTI and PBTI on the Ge and III-V FinFET SRAM
Authors:	胡璧合;莊景德
Contributors:	國立中央大學電機工程學系
Keywords:	電子電機工程
Date:	2015-09-11
Issue Date:	2015-09-11 15:26:09 (UTC+8)
Publisher:	科技部
Abstract:	研究期間：10408~10507
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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