佈植碳離子於氮化鎵/氮化銦鎵多重量子井發光二極體之特性研究; Photoluminescence studies of Carbon-Implanted GaN/InGaN M.Q.W. LED

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6782

Title:	佈植碳離子於氮化鎵/氮化銦鎵多重量子井發光二極體之特性研究;Photoluminescence studies of Carbon-Implanted GaN/InGaN M.Q.W. LED
Authors:	楊宇智;Ue-Zhi Yang
Contributors:	光電科學研究所
Keywords:	佈植;碳;氮化鎵;發光二極體;光激發光譜;黃光發射;Carbon;yellow luminescence;GaN;LED;photoluminescence
Date:	2004-07-07
Issue Date:	2009-09-22 10:28:21 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本文實驗在研究碳離子佈值於氮化鎵/氮化銦鎵多重量子井發光二極體之特性研究，以30keV、55keV、130keV 不同能量佈植，形成5×1016，5×1018 cm-3不同佈植濃度，佈植在氮化鎵/氮化銦鎵多重量子井發光二極體上濃度為5×1017cm-3 之P型氮化鎵，藉以形成碳離子佈植後的黃光發射特性，進而達成藍黃雙光渾成之白光發光二極體之製作技術開發。光特性方面，利用光激發光譜(photoluminescence)的量測顯示，隨著碳離子佈植濃度的大於p型氮化鎵摻雜鎂的濃度時，本身p型氮化鎵的藍光發光機制(2.8eV)減弱，並開始有黃光放射的發光機制生成，而配合適合熱處理的修復，得到1050oc為最佳黃光放射修復溫度。在電性方面，根據霍爾效應特性量測(Hall effect measurement)顯示，佈植的碳離子濃度一旦大於p型氮化鎵的電洞濃度10倍以上，試片轉變為n 型的氮化鎵。發光二極體製作方面，由於P型氮化鎵被佈植區域因離子轟擊所造成損害及高濃度佈植轉變為n型之考量，本文採用網狀方格佈植結構的P型電極設計製作碳離子佈植於氮化鎵/氮化銦鎵多重量子井發光二極體，經發光二極體元件完成後量測其電激發光光譜，確實量得碳離子佈植所形成之黃光放射，證明以佈植方式形成白光二極體的可能性。 The photoluminescence properties of Carbon ion implantation into p-type GaN followed by rapid thermal annealing (RTA) in N2 ambient have been studied. By varying implantation concentrations, the p-type GaN can be converted into n-type GaN. Photoluminescence studies show that a green emission band could be observed from Cimplanted GaN:Mg. It was shown that such a green emission is related to the yellow luminescence observed from epitaxially grown C-doped GaN. The fabrication and characterization of C-implanted InGaN /GaN MQW LED was reported. The EL spectra obtained from the C-implanted LED device operated at 8V exists the peaks centered at 458nm and 525nm.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

Files in This Item:

File	Size	Format

社群 sharing

Loading...