我們利用反應式氧離子助鍍直流磁控濺鍍法來濺擊鉭(Tantalum)與矽靶(Silicon)以製備Ta2O5及SiO2之光學薄膜。以Ar為工作氣體，探討氧離子助鍍在能量、電流大小及轉速對於膜質之光學性質、沈積速率的影響。且基於磁控濺鍍可低溫鍍製薄膜的特性，將所得之最佳參數應用於塑膠基板上。藉由穿透率光譜圖及ESCA分析及膠帶測試討論離子轟擊對於塑膠基板附著力之影響與變化。 實驗結果顯示，以氧離子助鍍磁控濺鍍法於塑膠基板上鍍製抗反射膜，在波長450~700nm處可達平均反射率小於0.8%，最低反射率0.2%，參考波長550nm也有0.7%左右。而以離子轟擊清潔基板增加附著力的處理，可使基板附著力由0B改進至3B。若取商用TACHC膜為基板更能達到5B的規格，唯經離子轟擊後的塑膠膜，光學成效會偏離設計，推測乃因受熱導致膜質改變。 Thin films of Ta2O5 and SiO2 are prepared by oxygen ion-assisted DC magnetron sputtering of Tantalum and Silicon targets, respectively, using argon and oxygen as the working gas. The influences of oxygen flow rate, current and substrate holder rotation speed were investigated. The refractive indices and absorption coefficients were determined in the 350~850 nm wavelength range by envelope method. We also have discussed the effect of oxygen ion bombardment on the adhesion between TAC (triacetyl-cellulose) films and optical thin films by tape test and ESCA. Experimental results show that:(1) a four layers AR coating reduced the residual reflectance to an average value of 0.8% in the spectral range from 450~700 nm (2) ion bombarding improves the adhesion between the optical thin film and plastic substrate, after ion bombardment pre-treatment, coatings on TAC pass the ASTM 3B and TACHC pass the ASTM 5B specification but the optical performance is affected. The influence of pre-treatment on TACHC film is smaller than the TAC film. To have good optical performance and the adhesion, the TACHC is possibly the solution.
