竹炭拋光矽晶圓添加二氧化鈰之加工特性研究;Surface Roughness of effect on Silicon Wafer by bamboo carbon polishing with Cerium Oxide additives

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Title:	竹炭拋光矽晶圓添加二氧化鈰之加工特性研究;Surface Roughness of effect on Silicon Wafer by bamboo carbon polishing with Cerium Oxide additives
Authors:	吳宗成;Wu,Zong-cheng
Contributors:	機械工程學系在職專班
Keywords:	竹炭;拋光;矽晶圓;二氧化鈰;表面粗糙度;奈米石墨;bamboo carbon;polishing;wafer;Cerium Oxide;surface roughness;Nano-Graphite
Date:	2015-07-20
Issue Date:	2015-09-23 14:52:28 (UTC+8)
Publisher:	國立中央大學
Abstract:	本論文主要利用竹炭對矽晶圓試片進行拋光實驗，所採用的磨料為二氧化鈰拋光粉，實驗參數為奈米石墨、竹炭主軸轉速、轉盤轉速、拋光液濃度、加工時間及加工荷重等，藉由田口實驗規劃獲得一組較佳的加工參數，並進行驗證實驗，再將影響顯著的加工參數分別作單一因子實驗，探討在各個因子在不同參數條件下，並說明加工參數對於表面粗糙度之影響。經田口實驗分析，將影響顯著的加工參數進行單一因子實驗得知，對於矽晶圓試片表面粗糙度之最佳加工參數組合為：添加奈米石墨、竹炭轉速80 m/min、轉盤轉速90 rpm、拋光液濃度5 wt%、加工時間50 min、加工荷重2000g。實驗結果得知，在拋光液中加入奈米石墨，最佳表面粗糙度可達0.025μm，改善率達到92.15%，相較於拋光液中未加入奈米石墨之表面粗糙度為0.039μm，改善率則為87.85%，由實驗得知拋光液中加入奈米石墨能明顯改善矽晶圓試片的表面粗糙度。本研究自行設計線性滑軌之荷重載台與可調整轉速之竹炭主軸旋轉機構，安裝於精密單平面研磨機，並結合拋光液供給裝置，藉由竹炭主軸旋轉機構、轉盤旋轉以及配合搖擺機構，製成竹炭拋光設備，未來可應用於矽晶圓拋光製程。藉由竹炭內部多孔性與比表面積大之特性，將拋光液注入至竹炭維管束內，使拋光液經由維管束流出至竹炭與試片之加工接觸面，不斷地供給拋光液於試片上進行拋光加工，並配合所得之最佳加工參數，可呈現矽晶圓試片表面達到鏡面效果，竹炭的應用可成為業界於拋光製程的新選擇。;This experiment objective use porosities and bigger specific surface area advantages of bamboo carbon, use the characteristic of large specific surface and porosities of bamboo charcoal to adsorption abrasive and through in the wafer surface by pressure. When the bamboo carbon push on the workpiece surface, the abrasive will grinding, and because the bamboo carbon surface collapsed, resulting recycled and self-sharpening effectiveness, and continuous on the workpiece surface repeatedly machining, to raise the polishing effect. This research mainly use the Taguchi Method experiment on silicon wafer surface polishing processing, and the parameters that affect quality were analyzed and discussed. Use Taguchi experimental planning to get a group better processing the parameter, and to do validation experiments. The experiment proves that the best machining parameter combination is add Nano-Graphite, spindle speed 80 m/min, Turnplate speed 90 rpm, slurry concentration 5 wt%, time 50 mins, load 2000g. The slurry in this experiment, don′t use the Nano-Graphite surface roughness is 0.039μm. Add Nano-Graphite the surface roughness can be improved to 0.025μm of mirror effect. From the experimental result, we will find add Nano-Graphite can improve the silicon wafer surface roughness.
Appears in Collections:	[Executive Master of Mechanical Engineering] Electronic Thesis & Dissertation

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