由於人類對能源的需求越來越大，而在有限的資源下開發再生能源是一個必要的措施，在裡面太陽能佔了很大的部份，因為它取之不盡用之不竭，尤其是矽薄膜太陽能電池；近年來有不斷地的想法被提出，一般市場上場常用的方法是PECVD，但是有設備成本太高的問題，所以本文想利用比較便宜而且沒有污染的方法來鍍製矽薄膜太陽能電池的本質層，利用矽在結構上面的變化，發現了在過渡態可以形成高效率的微晶矽薄膜太陽能電池，其光敏度達到兩個次方，本文更利用了加上正偏壓的方式去改善結晶性不高的問題，使得其在同厚度下結晶比例上升，再加上正偏壓後，在過渡態也可以達到好的微晶矽太陽能電池的條件（光敏度達到兩個次方），亦利用了加上負偏壓克服了孔洞過多的問題，使得膜層更加的緻密，但卻又可以在過渡態時光敏度達到市面上所要求的兩個次方，這個方法克服了濺鍍不適合用於太陽能電池的說法。For mankind's demand for the energy is greater and greater, it is necessary to develop renewable energies under limited resources. Solar energy plays an important role in the renewable energies, because it is inexhaustible. One of the most important components is hydrogenated silicon thin film solar cells. A lot of kinds of ideas for the solar cells have been proposed in recently. The commercial method to fabricate thin film solar cells is PECVD. However, the method has disadvantages such as high facility cost. In this research, a cheaper and without toxic method to produce the intrinsic layer of silicon thin film solar cell has been demonstrated. To analyze the characteristics of the different crystalline structures, high-efficiency hygrogenated microcrystalline silicon thin film solar cell can be achieved when the silicon film is transition type which photosensitivity can be larger than two order. Besides, positive bias voltage has been applied on the substrate to improve the crystallization under the same thickness. After combining the process of transition type silicon with the positive bias voltage, the crystallation fraction of the film can be increased and the photosensitivity can also higher than two order. If we applied negative bias voltage on the substrate, the films become denser and less voids to reach two order in photosensitivity for the transition type of silicon. The results show the way to fabricate silicon thin film solar cells using spattering method.
