光電化學效應抑制P-型多孔矽形成之研究;The Inhibition of P-type Porous Silicon Formation by Photo- electrochemistry

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题名:	光電化學效應抑制P-型多孔矽形成之研究;The Inhibition of P-type Porous Silicon Formation by Photo- electrochemistry
作者:	江昭慶;Chiang,Chao- Ching
贡献者:	機械工程學系
关键词:	多孔矽;光電化學;奈米晶;porous silicon;Photo- electrochemistry;nano-crystals
日期:	2016-07-25
上传时间:	2016-10-13 14:52:43 (UTC+8)
出版者:	國立中央大學
摘要:	近年來，多孔矽研究和相關應用廣泛被應用到半導體製程、薄膜太陽能電池、藥物檢驗和燃料電池。因此，多孔矽的研究價值被廣泛認可。在研究中，我們使用的低功率雷射633、830、1064和1310nm，在氫氟酸(HF)溶液蝕刻P型矽的電化學製程，同時照射雷射進行了研究。雷射功率為幾個毫瓦照射，電化學蝕刻速率為100、200mA，蝕刻時間10、30分鐘，控制奈米級的多孔矽形成，已成功的被使用。同時研究中意外地發現，使用雷射照射於晶片表面，此時電化學蝕刻速率會降低。多孔矽的發光特性，通過光激發光頻譜(He -Cd 325 nm)雷射被激發，多孔矽的光譜並於顯微鏡中捕獲。PL光譜微觀分佈出現在多孔矽形成的過程光束強度分佈，發光峰值為單個PL峰，已確認雷射照射區的PL峰值，對應於室溫下紅色發光的1.94電子伏特。多孔矽呈現均勻尺寸的量子點，已於TEM的圖像證實。上述電化學反應經雷射功率大小照射，於晶片表面進行能量變化，與多孔矽的形成和電化學抑制反應進行控制，多孔矽具有奈米晶體的量子點結構。在雷射照射過程上，因為電子數目從襯底被激發，使得多孔矽層的形成有很大的影響，該圖像於較強度的紫外燈(365nm)照射下被捕獲。雷射抑制提供一個在奈米尺度的多孔矽層厚度良好的控制，研究表明，多孔矽的奈米顆粒和厚度是可以通過蝕刻期間的雷射光功率照射進行控制，是為一種可行性的技術。;In recent years, researches on porous silicon (PS) and related applications are widely applied to semiconductor industry, thin film solar cells, drug testing and fuel cell. So, the research value of porous silicon is widely acknowledged. In study, we used the effect of low power laser 633, 830, 1064 and 1310nm irradiation on the electrochemical etched of p-type silicon in hydrofluoric (HF) acid solution has been investigated. The laser beam power is several mW with electrochemical etched rate was 100 and 200mA for 10 and 30 minutes of etching times had successfully employed to control the formation of porous silicon of good nano-scale. At the same time research accidentally discovered that the etching rate would decrease use laser was synchronously shined on the surface of the wafer. The emission characteristics of porous silicon was excited by Photoluminescence (He -Cd 325 nm), and the spectra were acquired with an optical microscope. The microscopic distribution of the PL spectra appeared in the beam intensity distribution during the formation process. PL peak shows a single PL peak at 1.94 eV corresponding to red emission at room temperature. The single PL peak confirms the presence of uniform sized quantum dots (QDs) in laser irradiation area samples by TEM image. On the laser-irradiated surface, the electrochemical reaction is changed by the laser power due to the energy in the wafer, while porous silicon formation with electrochemical suppressing reaction is controlled. It has a QDs structure of nano-crystals. The laser irradiation in anodizing exercises a great influence on the formation of porous silicon layer because of the number of electrons being excited from the substrate. The laser inhibition provides a good control of the thickness of the porous silicon layer at the nano-scale. The image has been captured during the High intensity UV lamp (365nm). Nano-particles and thickness of porous silicon can be controlled by controlling laser power during Etching. The studies have shown that laser irradiation area of porous silicon layer is considered to be a feasible technology with thickness control.
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