四面體網格面重心向量開發及其在三維半導體元件模擬之應用;Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation

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Title:	四面體網格面重心向量開發及其在三維半導體元件模擬之應用;Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation
Authors:	簡楷哲;Chien, Kai-Che
Contributors:	電機工程學系
Keywords:	四面體;重心版;tetrahedron;barycenter
Date:	2017-06-29
Issue Date:	2017-10-27 16:09:07 (UTC+8)
Publisher:	國立中央大學
Abstract:	在此篇論文中，為了減少製程上資源的浪費，我們主要使用C語言軟體模擬半導體元件特性，開發出三維重心版模組，以四面體網格當基本元素，模擬三維半導體元件，相較於以往二維重心版模組，三維模組更能應用於不規則接面處，增加網格模組的彈性空間；首先模擬簡單的四面體電阻與PN-Junction的特性曲線來驗證其程式架構，接著把四面體網格模組轉換至梯形網格模組，並將梯形元件延伸至圓柱體元件，分析圓弧面相較於直角網格的差異性，使網格系統能更精確的模擬半導體元件。;In this thesis, in order to reduce the process cost, we use C language software to simulate characteristics of semiconductor device. We developed 3D barycenter module which is composed of tetrahedral mesh elements to simulate 3D semiconductor device. The 3D module is better than 2D module and it increases the flexibility to fit the environment. First of all, a simple tetrahedral resistor and PN junction will be simulated and compare to the theoretical for verification. Next, the tetrahedral module will be applied to trapezoidal module, and extended to cylindrical semiconductor device. The 3D module can help us improve the accuracy of semiconductor device.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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