所有的模擬結果皆證實此四面體網格的廣泛性及可靠度。 ;In this thesis, we use C++ language to develop a tetrahedron element for 3-D device simulation. Barycenter method can be applied to arbitrary tetrahedron, and we use the edge vector to obtain the parameters needed by the core equation, and verify the electric field, current density and hole current density. Finally, the tetrahedrons are combined into cube applied to the N-type silicon semiconductors, PN diodes, and the spherical coordinate. In addition, these applications are used for theoretical derivation and compared with the program simulation. All the simulation results confirm the reliability of this tetrahedron mesh.
