四面體外心模組開發與其在三維半導體元件模擬;Development of tetrahedron circumcenter element and its applications to 3-D semiconductor device simulation

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題名:	四面體外心模組開發與其在三維半導體元件模擬;Development of tetrahedron circumcenter element and its applications to 3-D semiconductor device simulation
作者:	洪筠荃;Hong, Yun -Quan
貢獻者:	電機工程學系
關鍵詞:	四面體;三維半導體;外心模組;元件模擬
日期:	2017-07-03
上傳時間:	2017-10-27 16:09:17 (UTC+8)
出版者:	國立中央大學
摘要:	本論文中，為了使模擬程式能夠更精確於實際製程，我們開發出以外心法四面體等效電路模型，來滿足邊緣效應所造成的誤差。為了實現網格準確度，我們分別對每個節點通入電壓來測試電流密度、特殊電阻及PN二極體進行驗證，與估算值及理論值做比較，驗證無誤後，希望可以開發由四面體模組拼湊成六面體結構，但不幸於直角四面體處外心外露，造成包覆體積重疊引起之誤差，因此在六面體結構為可惜之處，此外我們開發出環狀及球狀結構，希望可以增進建立點數最少三維立體網格。;In this thesis, in order to obtain an accurate simulation in the production process, we developed the 3-D tetrahedron circumcenter element to correct the error caused by the edge effect. So as to achieve the accuracy of mesh, we tested and verified the result by using the current density, special resistors and p-n diode. We also compared the estimated value with theoretical value to obtain the correct result from verification. We hope that we can develop the tetrahedral after this experiment. Unfortunately, the exposed right angle tetrahedron of circumcenter caused the error of the volume overlap. The hexahedral structure is a pity. Additionally, we developed a circular and spherical structure to obtain a 3-D mesh with a minimum grid points.
顯示於類別:	[電機工程研究所] 博碩士論文

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