子計畫五：高速全氮化鎵基功率驅動積體電路開發應用( I );Development and Application of High Speed Fully Integrated Gan Based Power Driver Ic( I )

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/78707

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/78707

Title:	子計畫五：高速全氮化鎵基功率驅動積體電路開發應用( I );Development and Application of High Speed Fully Integrated Gan Based Power Driver Ic( I )
Authors:	夏勤
Contributors:	國立中央大學電機工程學系
Keywords:	電壓轉換器;換流器;直流-直流轉換器;交流-直流轉換器;氮化鎵;開關電源;Voltage converter;Power Inverter;DC - DC converter;AC - DC converter;Gallium nitride;Switching power supply
Date:	2018-12-19
Issue Date:	2018-12-20 13:44:12 (UTC+8)
Publisher:	科技部
Abstract:	本專題計畫研究全氮化鎵基積體電路設計方案，目的為利用氮化鎵器件特有耐高壓且可高速度開關的特性，以及氮化鎵製程中的增強型，空乏型以及功率管三種氮化鎵器件搭配高壓電阻以及電容集成開發出基於全氮化鎵基工藝的功率積體電路以及相關功率應用模組。計畫預計分為四年，第一年針對全氮化鎵基低側功率驅動積體電路進行開發，係包括穩壓電路、過壓過流保護電路、高速比較電路、PWM驅動電路，以及震盪抑制電路；第二年基於第一年開發出的低側功率驅動器，分別開發高頻高速功率因子校正模組以及高頻隔離型充電器模組；第三年開發全氮化鎵基半橋驅動積體電路，除了優化低側驅動所需的各項子電路模塊，同時開發高側驅動器，其中主要包括高速生/降壓電平轉換電路，高速自舉電路以及驅動級非重疊保護電路等；第四年基於第三年設計出的全氮化鎵基半橋驅動積體電路，分別開發高頻非隔離LED驅動用降壓電路模組，全橋音頻放大器模組以及寬頻包絡追蹤放大器。本計畫欲發展之全氮化鎵基驅動積體電路除可用於各種電子產品及其終端設備中不可或缺的高速開關電源轉換器，並兼具綠色能源技術要求，為小型化，重量輕以及高效率的電壓轉換器或換流器提供積體電路設計範本，可廣泛應用於各種高附加值的電源電路以及工程系統。 ;This special project plans to study the Gallium Nitride based integrated circuit design. The purpose of the project aims to develop high frequency power integrated circuits and thereafter applications of power modules based on fully GaN-based process, which includes enhancement-mode GaN, depletion-mode GaN, and power GaN devices while utilization of the special properties of high-voltage stress as well as high-speed switching characteristics of GaN.The overall program is divided into four years. In the first year, we will design a fully integrated gallium nitride-based low-side driver, consisting of a voltage regulator circuit, over-voltage/over-current protection circuit, high-speed comparator circuit, PWM driver, and an oscillation suppression circuit. The work in the second year will develop a high-frequency high-speed power factor correction module and a high-frequency isolated charger module, respectively, based on the GaN-based high speed low-side driver developed in the first year. In the third year, we plan to design an all-gallium nitride-based integrated half-bridge driver. In addition to optimize the sub-circuit modules required for the low-side driver, we also develop high-side drivers, including high-speed level shifters, bootstrapped drivers and a non-overlapping protection circuit. In the fourth year, a high-frequency non-isolated step-down LED driver module, a high frequency full bridge audio amplifier module and a wideband envelope tracking amplifier will be designed and demonstrated based on the half-bridge integrated driver developed in the third year. In addition to be utilized in the high-speed switching power converters that are indispensable for various electronic products and their terminal applications, the fully gallium-based driver circuit developed in this project is also expected to meet the requirements of green energy technologies as well as the modern trends towards small form factor and light weight. The outcome of the projects provides high-speed power integrated circuit design paradigm for both high-efficiency voltage converters and power inverters, which can be widely used in a variety of high-end power circuits and engineering systems.
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	300	View/Open

社群 sharing

Loading...