無緩衝層之類單晶鍺/鍺錫異質接面製程技術開發及崩潰累增型光偵測器製作以應用於光積電技術;Buffer-Free Quasi-Single-Crystalline Ge/Gesn-On-Si Heterostructure and Avalanche Photodetectors for Opto-Electronic Integrated Circuits

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/78760

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/78760

Title:	無緩衝層之類單晶鍺/鍺錫異質接面製程技術開發及崩潰累增型光偵測器製作以應用於光積電技術;Buffer-Free Quasi-Single-Crystalline Ge/Gesn-On-Si Heterostructure and Avalanche Photodetectors for Opto-Electronic Integrated Circuits
Authors:	辛正倫
Contributors:	國立中央大學電機工程學系
Keywords:	光訊號傳輸;光積電技術;鍺/錫單晶薄膜;快速熱熔異質磊晶成長;微區拉曼光譜;光偵測器;元件高頻特性.;optical interconnect;single crystalline Ge/GeSn mesa;rapid-melting-growth technique;micro Raman;photodetector;high-frequency characteristics
Date:	2018-12-19
Issue Date:	2018-12-20 13:47:18 (UTC+8)
Publisher:	科技部
Abstract:	利用光波導取代高頻傳輸線、以光收發模組取代電收發模組，來實現處理器核對核的光學連接，一直以來被期待能延續莫爾定律以及提升大量訊號的傳輸與接收速度，屆時兼具高頻寬的理想將可實現。有鑑於此，現今已有提出以光連接系統包括雷射光源、光學調制器、光波導以及光檢測器作為取代傳統導線連接的因應之道。事實上要將這前瞻創新的光積電系統構想付諸實體仍有許多技術瓶頸。尤其，一般光通訊元件多是奠基於直接能隙的三五半導體，但是要將三五光電偵測器直接整合於矽積體電路，在整合技術上仍然是困難重重，就目前為止，想要將鍺應用於光電訊號接收技術的理想，也因為磊晶的需要所導致的材料結構和尺寸差異，讓光通訊連接大多止於功能性的單一元件驗證而難有實際應用。要突破這個僵局，本計畫提出—開發和現行半導體製程相容、且不需緩衝層的鍺/錫單晶薄膜技術，以此開發技術製作鍺/錫異質接面光偵測器，並量測與探討其電性物理參數，充分地展示未來應用於電/光轉換及資訊傳輸的可能性。本研究計畫以超越傳統電訊號傳導的光積電技術材料之成長、元件製作及特性展示作為研究對象，為期1年進行。此計畫也有先前研究所累積的基礎與經驗，相信此一研究能在期間內很有效率地做出好的結果，以期能對產業應用及學術理論研究更為透徹，並對往後的產業帶來新方向。 ;The idea of using light beams to replace metallic wires now progressively dominates the development of data/signal communications. In recent years, electronic–photonic synergy has become an increasingly potential solution to the extension of functionality of Moore's law since it combines the merit of photons in data transmission and electrons in data processing on a single chip. The advantages of high bandwidth and low energy consumption can be achieved simultaneously using this approach. A significant challenge is that traditionally optoelectronic devices are based on III–V semiconductors, which are not compatible with Si complementary metal-oxide-semiconductor field-effect transistor processing. Besides, the scale of germanium optoelectronics is far beyond the dimension of Si electronics due to the need of strain relaxing buffer layers. And yet, the integration of optical waveguided transmission and information processing has not been demonstrated in a single chip, only conceptual demonstration. In this research project, we will demonstrate an ideal solution for monolithic electronic–photonic integration by the single crystalline Ge and GeSn alloy mesa, and the investigation of its characteristics. The electrical characteristics of Ge/GeSn heterostructure photodetector would be also studied and the potential applications on high-frequency transmission would be demonstrated.The project will be conducted in one year through materials growth and design, Raman spectra, microelectronics processing and device measurement. The potential incorporation as well as the compatibility of Ge and GeSn alloy in the optoelectronic elements to correlate with circuitry would be demonstrated in this research project.
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	249	View/Open

社群 sharing

Loading...