垂直式有機發光電晶體 之點矩陣式微米尺寸面板設計與製作;Vertical Organic Light-emitting Transistors of the Micron Size Panel Design and Fabrication

NCU Institutional Repository > 理學院 > 光電科學研究所 > 博碩士論文 > Item 987654321/82767

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/82767

題名:	垂直式有機發光電晶體之點矩陣式微米尺寸面板設計與製作;Vertical Organic Light-emitting Transistors of the Micron Size Panel Design and Fabrication
作者:	邱盈蒼;Qiu, Ying-Cang
貢獻者:	光電科學與工程學系
關鍵詞:	垂直式有機電晶體;垂直式有機發光電晶體;高介電常數介電層;面板設計;微影製程;Vertical Organic Transistors;Vertical Organic Light-emitting Transistors;High-k Dielectric Layer;Panel Design;photolithography
日期:	2020-01-07
上傳時間:	2020-06-05 17:11:29 (UTC+8)
出版者:	國立中央大學
摘要:	本論文以製作微米尺寸垂直式有機發光電晶體(Vertical organic light-emitting transistors, VOLETs)陣列為主，除了詳細說明8×8點矩陣式面板的設計與製作流程之外，還清楚解釋其背後原因。透過原子層沉積(ALD)及曝光顯影等技術，製作出垂直式有機發光電晶體面板。使用ALD沉積高介電係數的三氧化二鋁與氧化鉿作為雙層介電層，並以ALD沉積N-type半導體材料氧化鋅，同時搭配綠光有機材料PFO:F8BT作為發光層。藉由顯影蝕刻方式將氧化鋅做微小圖案化，以達到單一像素尺寸最小可達到10μm×15μm的發光面積。透過光學微影技術，將每一道光罩圖案精準製作在元件上，使微小面積下有64個單一垂直式有機發光電晶體。同時發現電荷下注入式的垂直有機發光電晶體結構中，裸露出的氧化鋅面積與發光面積是一致的，利用此現象來定義發光面積。最後利用Arduino微控制器對面板進行驅動並成功發出10μm×15μm面積的綠光。 ;In this thesis, micro-sized Vertical organic light-emitting transistors (VOLETs) arrays, in addition to explaining the design and manufacturing process of 8 × 8 dot matrix panel in detail, the reasons behind it are also explained clearly. Through the technologies of atomic layer deposition (ALD) and exposure development, a vertical organic light-emitting transistor panel is fabricated. ALD was used to deposit aluminum oxide and hafnium oxide with a high dielectric constant as a double-layer dielectric layer, and ALD was used to deposit an N-type semiconductor material, zinc oxide, and a green organic material, PFO: F8BT, was used as a light-emitting layer. The zinc oxide is micro-patterned by a development etching method, so as to achieve a minimum light emitting area of a single pixel size of 10 μm × 15 μm. Through optical lithography technology, each photomask pattern is accurately fabricated on the substrate , so that there are 64 cell of the vertical organic light-emitting transistors under the micro size area. At the same time, it was found that in the vertical organic light-emitting transistor structure of the downward injection type of charge, the area of the exposed zinc oxide and the light-emitting area are consistent, and this phenomenon is used to define the light-emitting area. Finally, the panel is driven by an Arduino microcontroller and a 10μm × 15μm area is successfully radiant green light.
顯示於類別:	[光電科學研究所] 博碩士論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	202	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing

資料載入中.....