| 摘要: | 鈣鈦礦薄膜太陽能電池在近幾年期間，光電轉換效率急速上升地來到
25.2 %，不過成長幅度隨著單一接面限制也日漸趨緩，全球的科學家利
用堆疊型鈣鈦礦薄膜太陽能電池以突破光電轉換效率，此類型是以高
能隙太陽能電池(鈣鈦礦薄膜太陽能電池)堆疊於低能隙太陽能電池(矽
基太陽能電池)，分別吸收不同波段的太陽光，因此製備出半透明鈣鈦
礦薄膜太陽能電池是實現堆疊型鈣鈦礦/矽薄膜太陽能電池的先前工
作。本論文採用半透明雙面鈣鈦礦薄膜太陽能電池的架構為:
AZO/Ag/BCP: ZnO NPs/PC61BM/CH3NH3PbI3/PEDOT:PSS/ITO/glass。透
明導電的鋁摻雜之氧化鋅(Al-doped ZnO, AZO)薄膜為陰極、氧化銦錫
(ITO)薄膜為陽極;奈米級 Ag 為緩衝層; Bathocuproine: ZnO nanoparticles
(BCP: ZnO NPs)為緩衝層兼電子傳輸層; phenyl-C61-butyric acid methyl
ester (PC61BM) 為 電 子 傳 輸 層 、 poly(3,4- ethylenedioxythiophene)
polystyrene sulfonate (PEDOT:PSS)為電洞傳輸層; CH3NH3PbI3 則是元件
的吸光層。
透過 BCP: ZnO NPs 製程參數的調控、Ag 厚度與蒸鍍鍍率的改變、
濺鍍 AZO 功率與膜層厚度的挑選，製備出的半透明雙面鈣鈦礦薄膜太
陽能電池當太陽光由 ITO 面照射太陽能電池，元件最高的功率轉換效
率（power conversion efficiency, PCE）可達 11.08 %，此元件的短路電
ii
流密度（short-circuit current density, JSC）為 21.30 mA / cm2、開路電壓
（open-circuit voltage, VOC）為 0.89 V 和填充係數（fill factor, FF）為
57.46 %；當太陽光由 AZO 面照射太陽能電池，元件最高的功率轉換效
率（power conversion efficiency, PCE）可達 5.40 %，此元件的短路電流
密度（short-circuit current density, JSC）為 9.33 mA / cm2、開路電壓（opencircuit voltage, VOC）為 0.88 V 和填充係數（fill factor, FF）為 64.6 %
最後，透過分析光強度相依的電流密度-電壓曲線，證實了鈣鈦礦
薄膜的電洞傳遞的性質優於電子傳遞的性質。此特性的理解有助於將
來實現高效率的雙面鈣鈦礦薄膜太陽能電池元件。;The power conversion efficiency (PCE) of perovskite thin film solar
cells have increased rapidly to 25.2 %. However, the increment in the PCE
is getting slower for the limitation of the single junction. To increase the PCE,
the perovskite/inorganic tandem configuration has been proposed. In the
tandem solar cell, the large bandgap perovskite solar cell has to be fabricated
on the low bandgap inorganic solar cell. Therefore, an efficient semitransparent perovskite thin film solar cell has to be developed in advance.
In this research, the architecture of the semi-transparent bifacial
perovskite thin film solar cell is: Al-doped ZnO/Ag/BCP: ZnO
NPs/PC61BM/CH3NH3PbI3/PEDOT:PSS/ITO/glass. Al-doped ZnO (AZO)
and ITO are used as the cathode and the anode, respectively. PCBM and
PEDOT:PSS are used as the electron transport layer (ETL) and the hole
transport layer (HTL), respectively. CH3NH3PbI3 thin film is used as the light
absorbed material (LAM). Ag/BCP: ZnO NPs is used as the buffer layer and
ETL modified layer.
After the optimization process, the highest PCE of the bifacial
perovskite thin film solar cell is 11.08% when the device is illuminated from
the ITO side, the short-circuit current density (JSC) is 21.30 mA/cm2
, the
open-circuit voltage (VOC) is 0.89 V and the fill factor (FF) is 57.46 %. The
highest PCE of the bifacial perovskite thin film solar cell is 5.40 % when the
device is illuminated from the AZO side, the JSC is 9.33 mA/cm2
, VOC is 0.88
V and FF is 64.6 %. Finally, from the light intensity-dependent FF of the
bifacial perovskite solar cell show that the hole mobility is higher than the
electron mobility in the CH3NH3PbI3 thin film. |
