| 摘要: | 本計畫基於前兩年開發應用氮化鎵元件於高頻諧振電源轉換器的研製基礎上，進一步研發以氮化鎵功率電晶體為基礎元件的功率積體電路以及開發應用於高效率，高功率密度的諧振轉換器。研發目的是展示一高切換頻率的電源轉換器可同時達到高功率輸出，高效率以及高功率密度。方法為設計以全氮化鎵功率/邏輯元件為基礎的功率積體電路並配合設計平面磁性被動元件組成一諧振電壓轉換器，並應用氮化鎵元件具有耐高壓和高速開關的特性以及常見的三種類型的元件，包括增強型，空乏型和高壓功率電晶體作為構成元件。本計畫首先應用氮化鎵功率開關設計並優化了高功率輸出的LLC轉換器，以實現大於1kW的輸出功率，1.5 MHz的開關頻率，大於35 W / cm3 的功率密度以及大於95％的效率。同時，為驗證積體電路用於功率電源的優勢，另開發輸出功率為190W的新型LLC功率轉換器做為測試功率積體電路的載具。本計畫設計開發的單晶片功率半橋驅動電路以及多通道單晶片低側驅動器，包括新型的穩壓器電路，過壓和過流保護電路，高速比較器電路，PWM驅動電路，新型高速升壓/降壓電路，振盪抑制電路和死區時間電路，將在同一晶片上製作後封裝驗證。此外，為提升高頻化的諧振式轉換器的整體性能，不至受限於傳統變壓器繞阻的結構，本計畫設計出分數圈繞組的變壓器結構降低輸出電流在二次側繞組上的損耗，同時也可以降低鐵心的體積。分數圈的圈比的實現，以及控制多組二次側繞組同時導通的方式可用以提高轉換器的功率密度。本計畫所規畫設計的諧振電源以及功率積體電路可以展示使用氮化鎵功率元件作為設計功率模組產品或系統的便利性，降低以往大部分電源電路需在印刷電路板上大量佈線的複雜性，更大幅提高功率模組的功率密度。本計畫預開發出的全氮化鎵功率積體電路可用於各種電源或電子產品及各種高速開關電壓轉換器。它還具有綠色能源技術的要求，並且緊湊輕巧。高效能且整合容易，可廣泛用於各種高附加值的電力電子電路和工程系統。 ;This two-year project is based on the development of integrated gallium nitride power devices in the previous two years and the development of integrated gallium nitride power circuits. The purpose is to develop a high-power and high-efficiency converter using a full gallium nitride-based integrated circuit system. Because GaN devices are resistant to high voltage and high-speed switching, three types of GaN devices, including enhancement, depletion, and high-voltage power transistors, are often used in power conversion circuits and related power application modules. This project first designed and optimized a GaN-based high-power LLC converter to achieve an output power greater than 1kW, a switching speed of 1.5 Mhz, a power density greater than 35 W / cm3, and an efficiency greater than 95%. At the same time, a new LLC power converter architecture with an output power of 190W will be developed. In order to achieve high efficiency and high power density, the transformer structure of a fractional-turn winding, which reduce core volume and conduction loss on the secondary-side winding, are developed. The optimized transformer design also enables the turn ratio of the fractional-turn to achieve normal coupling of primary and secondary sides without generating flux imbalance. On the other hand, to meet the demand for integrated power drivers for converters, single-chip power half-bridge drivers and multi-channel single-chip low-side drivers will be designed and developed and verified. The drivers, including new voltage regulator circuits, over-voltage and over-current protection circuits, high-speed comparison circuits, PWM drive circuits, high-speed step-up / step-down circuits, oscillators, and the dead time control circuits, are integrated on the same chip. The power integrated circuit can greatly increase the convenience of using GaN power switching elements in the power module, reduce the complexity of PCB board wiring, and improve the power density of the power module. The full gallium nitride integrated circuit developed by this project can be used in various electronic products and various high-speed switching power converters. It also has the requirements of green energy technology and is compact and lightweight. Efficient and easy to integrate, it can be widely used in various high value-added power electronic circuits and engineering systems. |
