應用於5G小型基地站寬信號頻寬 高線性度 低記憶效應之功率放大器與發射機研究;Research on Power Amplifiers and Transmitter with Wide Signal Bandwidth, High Linearity, and Low Memory Effect for 5g Small Cell Applications

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 研究計畫 > Item 987654321/84735

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/84735

题名:	應用於5G小型基地站寬信號頻寬高線性度低記憶效應之功率放大器與發射機研究;Research on Power Amplifiers and Transmitter with Wide Signal Bandwidth, High Linearity, and Low Memory Effect for 5g Small Cell Applications
作者:	邱煥凱
贡献者:	電機工程學系
关键词:	n77頻段;n79頻段;氮化鎵;互補式金屬氧化物半導體;小型基地站;多赫蒂功率放大器;J類功率放大器;射頻發射機;記憶效應;平均功率追蹤;數位預失真;疊接式功率放大器;鄰近通道功率;誤差向量振幅;;5G small cell;ACPR;average power tracking;;Class-J power amplifier;CMOS;digital pre-distortion;Doherty power amplifier;EVM;GaN;memory effect;n77/79 band;RF transmitter;stacked FET.
日期:	2020-12-08
上传时间:	2020-12-09 10:49:07 (UTC+8)
出版者:	科技部
摘要:	三年期計畫擬研製可應用於5G NR FR1頻段之n77 ~ n79頻段之功率放大器與射頻發射機。本計畫將利用氮化鎵與互補式金屬氧化物半導體製程分別實現第五代行動通信小型基地站(n77)以及手持裝置發射機(n79)。計畫目標為操作在訊號頻寬100 MHz下，改善功率放大器之線性度及記憶效應，同時具寬頻、高增益、高效率的良好特性。計畫分為兩部分，分別於第一年研製適用於Micro cell小型基地站之寬頻、高線性度、低記憶效應之9 W功率放大器。擬採用寬頻J類功率放大器及多赫蒂(Doherty)功率放大器架構；第二年將GaN功率放大器整合至印刷電路板，同時處理偏壓電路調變與散熱問題，以驗證消除電性與電熱耦合記憶效應後改善線性度的效果；同時採用平均功率追蹤技術提升功率增進效率(PAE)，最後採用數位預失真(DPD)近一步改善鄰近通道功率比(APCR)及誤差向量振幅(EVM)。第二部分則將於第二年設計適用於n79頻段之高整合度、高線性度、低記憶效應發射機。擬採用疊接式功率放大器架構，目標為適用於class 3功率等級，在不依賴BAW濾波器時，將鄰近通道功率比降低，避免干擾到5.2 GHz 頻段之室內WiFi6頻段；計畫第三年將n79發射機結合平均功率追蹤技術，整合至印刷電路板，同時採用數位預失真，近一步改善鄰近通道功率比以及誤差向量振幅。 ;This three-year project intends to develop power amplifiers and RF transmitter that can be applied in the bands n77 to n79 of the 5G NR FR1 band. The project will adopt GaN and CMOS processes to implement the fifth-generation mobile communications small base station (n77) and handheld device transmitter (n79), respectively. The goal of the project is to develop the design flow for a high power amplifier with wide bandwidth, high power added efficiency (PAE), high linearity, and low memory effects that can comply with the modulated signal bandwidth up to 100 MHz. The project divides into two parts. In the first year, we will adopt class-J and Doherty architectures to realize two 9-W GaN power amplifiers. The characteristics of the amplifiers are called for wideband, high linearity, and low memory effects for small cell base station. In the second year, the developed GaN power amplifiers will be integrated into the printed circuit board as module, which the bias circuit modulation and heat dissipation problems will be dealt with to verify the eliminations of the electrical and electro-thermal memory effects. After then, we will observe the improvements of linearity. Meanwhile, the average power tracking technology is used to improve the power efficiency (PAE). Finally, the digital predistortion (DPD) is used to further improve the adjacent channel power ratio (APCR) and error vector amplitude (EVM). The second part will design a high integration, high linearity, and low memory effects transmitter for the n79 band in the second year. It is proposed to use stacked power amplifier architecture, with the goal of being suitable for class 3 power levels. Without the expensive BAW filter placed in front of transmitter, our goal is to reduce the ACPR of the RF transmitter to avoid the interference with indoor WiFi-6 bands in the 5.2 GHz band. In the third year, the developed n79 RF transmitter chip is then integrated root-mean-square power detector and DC-to-DC converter into the printed circuit board as a transmitter module which average power tracking technology will be applied to improve the PAE under different modulation signals. Finally, DPD technique is used to further improve the performances of ACPR and EVM.
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
显示于类别:	[電機工程學系] 研究計畫

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	264	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....