抑制層對降低電漿輔助原子層沉積二氧化鉿薄膜結晶之研究;Reduce the crystallization of Plasma-Enhanced Atomic Layer Deposition HfO2 thin film by insert interlayer

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題名:	抑制層對降低電漿輔助原子層沉積二氧化鉿薄膜結晶之研究;Reduce the crystallization of Plasma-Enhanced Atomic Layer Deposition HfO2 thin film by insert interlayer
作者:	何宜祐;He, Yi-You
貢獻者:	光電科學與工程學系
關鍵詞:	抑制薄膜結晶;原子層沉積;Atomic Layer Deposition;Reduce the crystallization
日期:	2021-07-29
上傳時間:	2021-12-07 11:48:30 (UTC+8)
出版者:	國立中央大學
摘要:	本論文使用電漿輔助原子層沉積法鍍製二氧化鉿(HfO2)單層膜，在低溫製程100?C下使用水、純氧電漿、氧氣混合氬氣電漿等不同氧化方式，探討折射率(n)和消光係數(k)的趨勢來找出最佳參數，研究發現使用氧氬混合電漿，能夠增強介面化學反應且降低雜質，使消光係數(k)在波長550 nm下最低可達到1.6×10-4，分析在相同製程溫度下熱製程與電漿製程的結晶強度，也探討了在相同製程溫度條件下隨著薄膜厚度增加，薄膜的結晶強度變化。由於原子層沉積技術在低溫100?C下，使用電漿製程會比熱製程更容易使薄膜結晶，本論文研究出在HfO2薄膜中插入抑制層後成功降低薄膜結晶，過程中利用Macleod 軟體模擬，交叉驗證其方法的可行性，使用X光繞射儀分析HfO2薄膜，結晶強度成功從3126下降至110，降低了高達96%，用原子力顯微鏡分析薄膜表面，其薄膜粗糙度從1.94 nm下降至0.434 nm有著大幅度的進步，並使用掃描式電子顯微鏡觀察薄膜表面結晶情形，有著明顯表面平坦化的趨勢。 ;In this thesis, plasma-enhanced atomic layer deposition (PE-ALD) was used to deposit a single layer of hafnium dioxide (HfO2) onto the wafer substrate. ALD makes use of various oxidation methods using water, pure oxygen plasma, and oxygen mixed argon plasma under a low-temperature 100?C process. One must explore the trend of refractive index (n) and extinction coefficient (k) to find the best possible parameters of the single layer in question. The study found the use of oxygen mixed argon hybrid plasma, can enhance interface chemical reaction and reduce impurities. The lowest extinction coefficient (k) can reach 1.6×10-4 at a wavelength of 550 nm. Following this, the crystal strength of the thermal process and the plasma process at the same process temperature was analyzed. In addition, the change of the film crystallization strength with the increase of the film thickness under the same process temperature was also discussed. Since ALD technology uses plasma processes under low-temperature 100?C processes, it is easier to crystallize thin film than the thermal process. This thesis studies the reduction of film crystallization by inserting a suppressor layer in the HfO2 film. Using Macleod software to simulate the process, the feasibility of the method was confirmed. An X-ray diffractometer was used to analyze HfO2 film. The crystal strength of HfO2 film was successfully reduced from 3126 to 151, which decreased the crystal strength of HfO2 film by 96%. The atomic force microscope (AFM) analysis of the film surface showed that the film roughness has decreased from 1.94 nm to 0.434 nm. Moreover, whilst using the Scanning Electron Microscope (SEM) for film surface observation, it resulted in a surface flattening trend. This significant result is the verification of the method′s feasibility.
顯示於類別:	[光電科學研究所] 博碩士論文

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