晶圓瑕疵數預測與等效瑕疵效率值分析;Wafer Defect Number Prediction and Equivalent Defect Efficiency Analysis

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題名:	晶圓瑕疵數預測與等效瑕疵效率值分析;Wafer Defect Number Prediction and Equivalent Defect Efficiency Analysis
作者:	呂忠霖;Lu, Zhong-Lin
貢獻者:	電機工程學系
關鍵詞:	晶圓圖;隨機性錯誤;等效瑕疵數;平均瑕疵數;標準差;瑕疵效率值;wafer map;random error;equivalent defect number;average defect number;standard deviation;defect efficiency
日期:	2021-08-17
上傳時間:	2021-12-07 13:09:01 (UTC+8)
出版者:	國立中央大學
摘要:	在本篇論文中，我們以隨機灑點方式產生測試用合成晶圓，並建構迴力棒模型，透過先前的研究得到的特徵參數對合成晶圓中的瑕疵數做更進一步的分析，希望能藉由特徵參數得知的數據與真實平均瑕疵數比較，查看是否能準確推算平均瑕疵數，再藉由平均瑕疵數的比較，獲得判斷晶圓群聚現象的等效瑕疵效率值，並將其應用於合成及真實晶圓。本篇研究中使用 Poisson 機率模型為基礎，先從中得知真實平均瑕疵數 λ0，再使用先前研究中[11][16]各種特徵方程式來推測瑕疵數，藉由調整不同的參數條件:晶圓大小、固定瑕疵數、特定區間瑕疵數等，來分析推測後的瑕疵數值與其分布，最後再加以統計。再來，根據先前的研究[16]所得之瑕疵效率值，我們將其做些微修正，利用修正後的結果來分析合成及真實晶圓的群聚現象，並觀察在不同瑕疵效率值中判斷出晶圓的結果為何，接著再與先前的研究[4]B-score 進行比較，可獲得一等式，利用此等式進一步推導等效瑕疵效率值與標準差之間的關係。最後，我們將等效瑕疵效率值應用在[13]的自製特殊晶圓上，觀察兩者的關係，並從結果上來判斷我們所得之等效瑕疵效率值，再將這些參數與 B-score 進行比較，驗證我們所推導之等式正確性，以及兩種參數的相關性。;In this paper, we randomly sprinkle dots to generate synthetic wafers for testing, and construct a boomerang model. The number of defects in the synthetic wafer is further analyzed through the characteristic parameters obtained from the previous research. We are hoping that by the characteristic parameters of the data compared to the real average number of defects, see if we can accurately calculate the average number of defects. Then, by comparing the average number of defects, the equivalent defect efficiency value for judging the phenomenon of wafer clustering is obtained, and it is applied to synthetic and real wafers. The Poisson model is used as the basis for this research. First get the true average defect number λ0, and then use various characteristic equations in previous research [11][16] to estimate the number of defects. By adjusting different parameter conditions: wafer size, fixed defect number, defect number in a specific interval, etc., analyze the estimated defect value and its distribution, and finally make statistics. Next, according to the equivalent defect efficiency value(EDE) obtained from the previous research [16], we will make some slight corrections. Using the corrected results to analyze the clustering phenomenon of synthetic and real wafers, and observe the results of the wafers in different EDE. Then compared with the previous study [4] B-score to get an equation that can be used to derive the relationship between the EDE and the standard deviation. Finally, we apply EDE to the homemade special wafer in [13], and observe the relationship between the two and judge EDE we obtained from the result. Then compare these parameters with B-score to verify the correctness of the equation we derive and the correlation between the two parameters.
顯示於類別:	[電機工程研究所] 博碩士論文

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