氫離子佈值Si/SiO2薄膜覆蓋矽中之空位對氫擴散之效應;The effect of the vacancy of Si/SiO2/Si implanted by hydrogen ion on hydrogen diffusion

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題名:	氫離子佈值Si/SiO2薄膜覆蓋矽中之空位對氫擴散之效應;The effect of the vacancy of Si/SiO2/Si implanted by hydrogen ion on hydrogen diffusion
作者:	吳彥廷;Wu, Yan-Ting
貢獻者:	機械工程學系
關鍵詞:	離子佈值;絕緣層上矽;擴散;界面陷阱;Ion implantation;SOI;diffusion;interface trap
日期:	2021-06-18
上傳時間:	2021-12-07 13:13:27 (UTC+8)
出版者:	國立中央大學
摘要:	在半導體元件技術的發展下，受惠於未來的趨勢如5G通訊和AI人工智慧，對元件的需求持續增加，其中SOI具備高效能和低功耗的特性，其中smart cut製程是製作SOI最主流的方式。本研究針對氫離子佈值後氫和矽晶圓的交互作用，我們使用TRIM模擬軟體模擬相同參數下離子佈值的射程分佈以及空位分佈，接著使用SIMS,TEM和拉曼光譜等儀器去檢測氫在矽晶圓裡的分佈，可以觀察到SiO2/Si界面有明顯的氫峰值出現，可以推測為界面的陷阱效應，並且在試片的TEM剖面圖中觀察到明顯的裂縫，此裂縫位置剛好坐落在損傷最高的位置。 ;With the development of semiconductor device technology, benefit from future technological trends such as 5G communications and AI artificial intelligence, the demand for device continues to increase. Among them, SOI has the characteristics of high performance and low power consumption, and smart cut is the most mainstream way to make SOI. This research focuses on the interaction between hydrogen and silicon wafers after hydrogen ion implantation, we use TRIM simulation software to simulate the ion range and vacancy distribution under the same parameters. Then we use SIMS, TEM and Raman spectroscopy instruments to detect the distribution of hydrogen in the silicon wafer, it can be observed that there is an obvious hydrogen peak at the SiO2/Si interface, it can be inferred as the trap effect of the interface. In addition, obvious cracks were observed in the TEM cross-section profile of sample, and the position of the crack was just at the position with the highest damage
顯示於類別:	[機械工程研究所] 博碩士論文

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