在重摻雜N型半導體或高純度矽晶材料中轉換介面壁壘型態使電洞流為主控電流，以進行表面陽極氧化合成奈米結構;Transforming the Type of Interface Barrier to Make Hole Current as of the Dominant Current in Heavily Doped N-Type Semiconductors or in High-Purity Silicon Anodizes Its Surface for Synthesizing Nano-Structure

NCUIR > Engineering College > Departmant of Mechanical Engineering > Research Project > Item 987654321/87735

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/87735

Title:	在重摻雜N型半導體或高純度矽晶材料中轉換介面壁壘型態使電洞流為主控電流，以進行表面陽極氧化合成奈米結構;Transforming the Type of Interface Barrier to Make Hole Current as of the Dominant Current in Heavily Doped N-Type Semiconductors or in High-Purity Silicon Anodizes Its Surface for Synthesizing Nano-Structure
Authors:	李天錫
Contributors:	國立中央大學機械工程學系
Date:	2021-12-21
Issue Date:	2021-12-23 14:56:00 (UTC+8)
Abstract:	研究領域：材料科技
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Departmant of Mechanical Engineering ] Research Project

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