無電平轉移的高壓雙N型半橋驅動;Level shifter-less high-voltage dual N-type half-bridge driver

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/88383

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/88383

Title:	無電平轉移的高壓雙N型半橋驅動;Level shifter-less high-voltage dual N-type half-bridge driver
Authors:	黃立杰;Huang, Li-Jie
Contributors:	電機工程學系
Keywords:	無電平轉移;Level shifter-less
Date:	2022-05-23
Issue Date:	2022-07-14 01:09:00 (UTC+8)
Publisher:	國立中央大學
Abstract:	現今智慧型手機以及移動裝置大量普及，人們追求越來越高性能的電子產品。儘管電子產品的功耗需求大幅增加，然而傳統鋰電池的進步卻無法跟上。人們逐漸將目標從大容量電池轉向高功率充電器。傳統高功率充電器體積大，不易於隨身攜帶，而氮化鎵靠著高功率密度的特性，製成功率元件後能讓快充的體積大幅縮小。氮化鎵(GaN)有著相較於傳統矽（Si）元件更高的工作頻率，矽元件的切換頻率極限約為65~95kHz，再高即會造成元件耗損與不必要的耗能。但氮化鎵製作的元件在高頻時仍有良好效能且穩定度高，高密度功率的特性可以使周邊元件的尺寸跟著縮小，與未來5G基地台密度高所需的特性相符。本論文針對高壓半橋驅動，在高電位端使用了新穎的電路架構，能夠縮減電路的複雜度，一般傳統的高壓半橋驅動往往都需要額外加上電平轉移電路，而使用了本文的架構後，能夠省略電平轉移設計，使的電路更加精簡。使用了40V的輸入電壓，操作頻率為1M Hz，佔空比(duty cycle)為45%，應用在降壓轉換器，輸出電壓約為18V，輸出功率約為33W，效率為90%。 ;Nowadays, smart phones and mobile devices are widely used, and people are pursuing more and more high-performance electronic products. Although the power consumption requirements of electronic products have increased significantly, the progress of traditional lithium batteries has not been able to keep up. People gradually shift their target from large-capacity batteries to high-power chargers. Traditional high power chargers are large in size and not easy to carry around. However, GaN relies on the characteristics of high power density to greatly reduce the volume of fast charging after being made into power components.Gallium nitride (GaN) has a higher operating frequency than traditional silicon (Si) devices. The switching frequency limit of silicon devices is about 65~95kHz. Even higher frequencies will cause component loss and unnecessary energy consumption. However, the components made of gallium nitride still have good performance and high stability at high frequencies. The high-density power characteristics can reduce the size of peripheral components, which is consistent with the characteristics required for high density of future 5G base stations. This paper is aimed at high-voltage half-bridge driving, and uses a novel circuit architecture on the high-potential side, which can reduce the complexity of the circuit. Generally, traditional high-voltage half-bridge drives often require additional level shifting circuits, and use the architecture of this article. Later, the level shift design can be omitted, making the circuit more streamlined. Using an input voltage of 40V, operating frequency of 1M Hz, duty cycle of 45%, applied to a step-down converter, the output voltage is 18V, the output power is about 33W, and the efficiency is 90%.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	87	View/Open

社群 sharing

Loading...