本論文探討幾何效應對於量子點奈米線系統的影響，我們透過調整電子躍遷強度達到控制量子點奈米線使之呈現一維、二維及三維的特性。在室溫下，最大功率因數傾向於電極的化學勢遠離量子點能階。同時，我們發現當電子傳輸以熱電子輔助隧穿過程為主時，席貝克係數(S)幾乎與電導無關。這樣能使我們的功率因數(PF)得到提升。但其聲子熱導也會隨著量子點截面積增加而提昇，最後發現在直徑為20nm、長度為125nm的三維量子點奈米線中，ZT值可以大於3。;We theoretically studied the topological effects on the thermoelectric properties of quantum dot array (QDA) quantum wires. The topological transition of QDAs from three dimension to one dimension can be modulated by different direction electron hopping strengths. At room temperature, the maximum power factor prefers the chemical potential of the electrodes away from the QD energy level. Meanwhile, we found that Seebeck coefficient is almost independent on electrical conductance when electron transport is dominated by thermionic assisted tunneling process. Finally, we obtained the thermoelectric figure of merit can reach three for a silicon quantum wire with a dimeter 20 nm and a length 125 nm.
