| 摘要: | 對於鈣鈦礦太陽能電池而言，其溶液可加工性是主要優勢之一，然而鈣鈦礦前驅溶液的再現性問題成為了大面積及商業化的最大阻礙。本研究分為兩部分進行探討，第一部分為控制鈣鈦礦前驅溶液的反應條件（溫度及時間）以找出最佳的前驅溶液狀態，第二部分為引入鈣鈦礦修飾層（苯乙基碘化銨(PEAI)、聚甲基丙烯酸甲酯(PMMA)及雙修飾層的PMMA/2,3,5,6-四氟-7,7′,8,8′-四氰二甲基對苯酉昆(F4-TCNQ)）進一步鈍化鈣鈦礦層的缺陷。適當地控制鈣鈦礦前驅溶液的反應條件，能使溶液狀態最佳化，進而提升鈣鈦礦太陽能電池之性能，結果顯示，前驅溶液於反應溫度為90℃，反應時間為30 min下以刮刀塗佈法製備電池，其VOC提升至1.094 V，填充因子(FF)提高至75.98%，光電轉換效率(PCE)達到17.74%。從各項分析中，證實控制反應條件可有效改善鈣鈦礦薄膜中的缺陷，降低非鈣鈦礦相生成。另外加入PEAI做為鈣鈦礦修飾層，FF提升至77.57%，從各項分析中，可看出其陷阱密度下降，證實PEAI能有效鈍化薄膜中的缺陷；PMMA則因絕緣性問題，導致內部串聯電阻上升；PMMA/F4-TCNQ層則是因F4-TCNQ的引入進而提升載子傳輸能力，但因厚度尚未最佳化，使內部串聯電阻更高。;For perovskite solar cells, solution processability is one of the main advantages. However, the reproducibility of perovskite precursor solutions has become the obstacle to large-area and commercialization. This study is divided into two parts. The first part is to control the reaction conditions (temperature and time) of the perovskite precursor solution to find the best state, and the second part is to introduce the modified layer (phenethylammonium iodide (PEAI), poly(methyl methacrylate) (PMMA) and PMMA/2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4-TCNQ)) to further passivate the defects of the perovskite layer. Properly controlling the reaction conditions of the perovskite precursor solution can optimize the state of the solution, thereby improving the performance of perovskite solar cells. The precursor solution was prepared by blade-coating at the reaction temperature of 90°C and the reaction time of 30 min. The VOC is increased to 1.094 V, the fill factor (FF) is increased to 75.98%, and the power conversion efficiency (PCE) can reach 17.74%. From various analyses, it is confirmed that controlling the reaction conditions can effectively improve the defects in perovskite films and reduce the formation of non-perovskite phases. In addition, PEAI is used as the perovskite modified layer, and the FF is increased to 77.57%. It shows that the defect density decreases, confirming that PEAI can effectively passivate the defects in the film. PMMA has an increase in internal series resistance due to its insulation. The introduction of F4-TCNQ can enhance the carrier transport capacity, but its thickness has not been optimized, so the internal series resistance is higher. |
