在本研究中，我們報導一種在室溫下透過聚苯乙烯奈米球微影術結合金屬輔助催化蝕刻法，成功在(001)矽單晶基材以一步驟、低成本、安全且快速的方式製備出大面積規則準直之矽單晶奈米錐陣列結構，透過調整蝕刻時間、氫氟酸、雙氧水及乙醇的濃度可以容易地控制矽晶奈米錐的高度及形貌，而高深寬比之矽晶奈米錐陣列具有超疏水性質，其水滴接觸角高於150°。接著，利用鎳金屬濺鍍沉積與高溫熱處理製備金屬鎳矽化物奈米錐結構。經由SEM、TEM與其相對應之電子選區繞射圖譜鑑定分析可證明所製備出之矽單晶奈米錐結構及NiSi2/Si磊晶奈米尖錐結構之形貌及其單晶結構並具備高度準直性。 由於NiSi2/Si磊晶奈米尖錐陣列的有序排列、鋒利尖端、單晶結構及低有效功函數，具有極低的啟動電場及優異的電子場發射特性。實驗結果展現出令人興奮的前景，提供了製備高效之尖錐狀矽化物基場發射電子元件的製程參考。 ;In this study, we reported a novel and room-temperature approach combining the polystyrene nanosphere lithography and metal-assisted chemical etching, and we successfully fabricate vertically-aligned, large-area and well-ordered silicon nanocone arrays on (001)Si substrate by the low cost, facile and one-step metal-assisted chemical process. The morphology and height of Si nanocones can be readily controlled by adjusting the concentrations of HF, H2O2, C2H5OH and the etching time. The obtained high-aspect-ratio Si nanocone arrays have superhydrophobic characteristics with water contact angle higher then 150°. Subsequently, the nickel silicide nanocone arrays were fabricated by sputter thin-film deposition and heat treatment processes. From SEM, TEM, SAED analysis indicated the silicon nanocone structure and NiSi2/Si nanocones are highly collimated and single crystalline. The NiSi2/Si nanocone structure, owing to their highly-ordered arrangement, sharp tips, single-crystalline structure, and low effective work function, exhibit a very low turn-on field and excellent field-emission properties. The obtained results will present the exciting prospects that the new approach would offer potential applications in constructing well-ordered arrays of high-efficiency cone-like in silicide-based field emitters.
