關鍵字：V/G、鍋晶轉、熱應力、參雜、團簇 ;Numerical simulation was used in this research in order to study how to manufacture the defect-free silicon crystal in the CZ method. Compare the effect to V/G in different rotation rate of crucible and crystal and analyze how the flow field affect the axial temperature gradient. With the increasing of the diameter of wafer and decreasing of the process node, it also considers the thermal stress effect to defect in different rotation rate of crucible and crystal. In the end, it simulates the doping concentration effect to the concentration and diameter of cluster in different rotation direction. At first, we discuss the value of V/G in iso-rotation and counter rotation and analyze how the flow filed affect the axial temperature gradient. The simulations show we can get the more uniform value of axial temperature gradient in iso-rotation. This research also compares the axial temperature gradient in different rotation rate of crystal and crucible. We can get the more uniform value of axial temperature gradient by adjusting the rotation rate of crystal. Increasing the rotation rate of crucible will be worse if we want to get a uniform value of axial temperature gradient. On the other hand, the distribution of thermal stress in iso-rotation and counter rotation are totally different. We can observe the thermal stress in different rotation rate of crucible and crystal. The distribution of the thermal stress is opposite. We also can infer the distribution of thermal stress by observing the shape of the interface. In the end, we also can find the relationship between doping concentration, cluster density and cluster diameter.
