| 摘要: | 近年來隨著充電系統的發展，大眾開始追求高效且快速的產品，從應用
於小功率的 3C 產品，到現在電動車所需的大功率應用，業界都在持續開 發中。搭載第三代寬能隙半導體製程的功率元件，例如碳化矽(SiC)和氮 化鎵(GaN)，相較於傳統矽(Si)製程，前者具備更高的電子速度及電子密 度，除了適合應用在高頻、高壓的產品外，產品體積也能達到輕量化的效 果，其特性為未來充電器發展的重要指標。
本論文介紹了一種零電壓切換諧振架構應用於降壓轉換器，為了有效的 降低電路開關切換損耗，在功率開關處引入了 LC 串聯諧振電路，達到開 關之電壓和電流產生相位差效果，避免兩者波型有重疊的現象，克服了傳 統硬開關的損耗缺點，實現軟開關技術改善開關條件，去降低開關損耗和 開關噪聲，從而提升整體電路效率。
實驗了兩種寬能隙半導體，分別為碳化矽和氮化鎵製程元件，在 200V 降壓 100V 實驗，效率分別為 89%和 92.5%，輸出電流為 1A。而 200V 降壓 50V 實驗中，氮化鎵電晶體在承受於高壓 830V 的情況下，效率表現為 86.3%，輸出電流為 2.25A。;In recent years, with the development of charging systems, Volkswagen has begun to pursue high-efficiency and fast products. From low-power 3C products to high-power applications required by electric vehicles, the industry is continuously developing. Power components equipped with third-generation wide-bandgap semiconductor processes, such as silicon carbide (SiC) and gallium nitride (GaN), have higher electron speed and electron density than traditional silicon (Si) processes. In addition to being used in high-frequency and high-voltage products, the product volume can also achieve a lightweight effect, and its characteristics are an important indicator for the future development of chargers.
This paper introduces a zero-voltage switching resonant architecture applied to a buck converter. In order to effectively reduce the switching loss of the circuit switch, an LC series resonant circuit is added to the power switch to achieve the phase difference effect between the voltage and current of the switch, avoiding the two The wave pattern overlaps, which overcomes the loss of traditional hard switching, realizes soft switching technology to improve switching conditions, reduces switching loss and switching noise, and improves overall circuit efficiency.
Two kinds of wide-bandgap semiconductor components, silicon carbide and gallium nitride, respectively, were stepped down from 200V to 100V, and the efficiency was 89% and 92.5%, respectively, and the output current was 1A. In the experiment of reducing the voltage from 200V to 50V, when the GaN transistor is subjected to a high voltage of 830V, the efficiency is 86.3%, and the output current is 2.25A. |
