在進行電阻式負載雙脈衝動態量測後以ID-VGS特性曲線觀察元件的VTH偏移和恢復的情形。再使用不同外部RG和不同關閉VDS、開啟ID的雙脈衝動態量測觀察元件前後的區別，得出不同外部 RG之間不會影響雙脈衝動態量後的特性，並且主導雙脈衝動態量測後產生影響的是關閉VDS。透過變溫加速恢復的方式，搭配阿瑞尼斯圖，得出陷阱的活化能分別為0.20和0.09 eV，再將結果帶入雙脈衝動態模擬，得出雙脈衝動態量測使ID-VGS變化的機制。;In this study, a double pulse test of Schottky p-GaN gate high-electron-mobility transistors has been investigated. Based on the double pulse test, is divided into the following two different sections: (1) Analyzed the changes in dynamic characteristics of the double pulse test with different loads and different measurement conditions, (2) Observed the influence and recovery on the device after a double pulse test with different measurement conditions.
In this paper, the double pulse test is used to study the GaN device, the double pulse test of the inductive load and the resistive load is carried out respectively, and verify the measurement results with a double pulse test simulation close to the actual measurement circuit. An ideal double pulse test circuit is proposed. To confirm the cause of the oscillation, the inductive load circuit is used to simulate the with and without parasitic effects, and the influence of the parasitic effect of the PCB on the simulation is obtained. Different measurement conditions are used for the resistive load double pulse test, and the variations of measurement waveform and parameters caused by different measurement conditions are obtained.
After the resistive load double pulse test, the VTH shift and recovery of the device were investigated with the ID-VGS characteristic curve. Observe the difference between the devices before and after the double pulse test with different external RG and different VDS,off. It is concluded that different external RG will not affect the characteristics after the double pulse test, but are dominated by VDS,off. Through accelerating the recovery by varying the temperature, with the Arrhenius plot, the activation energies of the traps are obtained to be 0.20 and 0.09 eV respectively, and then the results are used in the double pulse test simulation to obtain the mechanism of the ID-VGS shift caused by the double pulse test.
