利用雙朗繆爾探針分析中頻脈衝直流磁控濺鍍放電之性質;Time-resolved Langmuir double probes measurements in a pulsed mid-frequency DC plasma

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Title:	利用雙朗繆爾探針分析中頻脈衝直流磁控濺鍍放電之性質;Time-resolved Langmuir double probes measurements in a pulsed mid-frequency DC plasma
Authors:	顏于傑;Yan, Yu-Jie
Contributors:	材料科學與工程研究所
Keywords:	雙朗繆爾探針;中頻脈衝直流系統;電子溫度電子濃度;Langmuir probe;medium-frequency;pulsed DC system;electron temperature;electron density
Date:	2024-01-29
Issue Date:	2024-09-19 15:52:57 (UTC+8)
Publisher:	國立中央大學
Abstract:	頻率範圍5kHz-350kHz脈衝直流磁控濺鍍在薄膜沉積上已受到廣泛應用如:介電薄膜的製備。在脈衝直流磁控放電時會因為製程參數的改變，電漿中的電子溫度與離子濃度也會有所不同。可利用朗繆爾探針來測量其電漿密度、電子溫度和電漿位能(Plasma potential)。在許多文獻中，大多以單朗繆爾探針(Langmuir probe)來量測脈衝直流放電產生電漿環境下的時間解析，Welzel團隊透過自製雙朗繆爾探針(Langmuir probe)量測脈衝直流放電產生電漿環境下的時間解析電漿量測，得到在不同時間下離子濃度與電子溫度的變化，在不同陰極與探針距離與相同頻率不同空佔比(Duty cycle)下其離子濃度也會發生不同的變化，且得到朗繆爾探針需要在陰極的附近才能觀察到電子溫度與脈衝時間變化的相關性。針對不同製程參數下使用雙朗繆爾探針的量測的文獻較少，本論利用脈衝直流電源濺鍍鋁靶材，並對不同製程參數與電子溫度及離子濃度的影響作探討，最終得知隨著功率的上升其電子溫度由7 eV上升至11.5 eV，且離子濃度也由1×10^18 cm^(-3)上升至7×10^18 cm^(-3)。而靶材與探針量測距離也會使電子溫度及離子濃度發生變化，隨著量測距離增加(1.5 cm到10.1 cm)其電子溫度下降了約27 %(由9 eV至6.5 eV)，而離子濃度也由9.5×10^18 cm^(-3)下降至2×10^18 cm^(-3)，並針對以上量測的結果進行電漿行為的解釋與探討。 ;The pulse direct current (DC) magnetron sputtering in the frequency range of 5 kHz to 350 kHz has been widely applied in thin film deposition, such as the preparation of dielectric films. During pulse DC magnetron discharge, changes in process parameters lead to variations in electron temperature and ion density in the plasma. Langmuir probes can be employed to measure plasma density, electron temperature, and plasma potential. In many studies, single Langmuir probes have been used to measure the time-resolved plasma environment generated by pulse DC discharge. The Welzel team, however, utilized homemade dual Langmuir probes to measure the time-resolved plasma environment, revealing variations in ion density and electron temperature at different times. They observed that under the same frequency but different duty cycles and varying distances between the cathode and probe, ion density exhibited distinct changes. Additionally, the correlation between electron temperature and pulse duration was observed near the cathode. There is limited literature on the use of dual Langmuir probes under different process parameters. In this study, we utilized a pulse DC power source for sputtering aluminum targets and investigated the impact of different process parameters on electron temperature and ion density. The results indicated that with increasing power, electron temperature increased from 7 eV to 11.5 eV, and ion density rose from 1×10^18 cm^(-3) to 7×10^18 cm^(-3). The distance between the target and probe also influenced electron temperature and ion density. As the measurement distance increased (from 1.5 cm to 10.1 cm), electron temperature decreased by approximately 27% (from 9 eV to 6.5 eV), and ion density decreased from 9.5×10^18 cm^(-3) to 2×10^18 cm^(-3). The results were further interpreted and discussed in the context of plasma behavior.
Appears in Collections:	[Institute of Materials Science and Engineering] Electronic Thesis & Dissertation

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