1200V 加強型矽基板氮化鎵高電子遷移率電晶體開發;Development of 1200V E-mode AlGaN/GaN HEMTs on Si Substrate

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題名:	1200V 加強型矽基板氮化鎵高電子遷移率電晶體開發;Development of 1200V E-mode AlGaN/GaN HEMTs on Si Substrate
作者:	吳晟豪;Wu, Chen-Hao
貢獻者:	電機工程學系
關鍵詞:	氮化鎵高電子遷移率電晶體;GaN HEMT
日期:	2023-08-16
上傳時間:	2023-10-04 16:13:02 (UTC+8)
出版者:	國立中央大學
摘要:	1200 V 元件所使用之磊晶片為成長於低阻值矽基板上並具有 p 型氮化鎵層之氮化鋁鎵/氮化鎵異質結構，為了使元件得以承受 1200 V 的崩潰電壓，並且降低來自氮化鎵與矽基板晶格不匹配之問題，磊晶層中使用的緩衝層厚度達 6.5 μm 並且在該層中進行碳元素的摻雜，藉此來提升垂直方向的絕緣性。在此磊晶結構上製作加強型氮化鎵高電子遷移率電晶體並進行討論，除了傳統的 p 型氮化鎵閘極結構之外，同時製作具源極場板的 p 型氮化鎵閘極結構進行量測。此外也利用 Silvaco TCAD 特性模擬有無源極場板之元件電場分析。基板接地之元件崩潰電壓測試中，傳統的 p-GaN gate HEMT (LGD = 20 μm)在汲極漏電流達 1 mA/mm 時之崩潰電壓為 1755 V、具源極場板之元件為 1759 V，而特徵導通電阻(RON,sp)則分別為 7.57 mΩ·cm2 以及 7.89 mΩ·cm2。透過對不同電極漏電流的分析了解崩潰電壓限制主要來自於垂直方向之基板(Isub)漏電流所導致，由於是 Isub 所主導的崩潰電壓，所以閘極邊緣電場分散的場板結構並無對崩潰達到改善。但進一步採用基板浮接之崩潰電壓測試中，傳統 p-GaN gate HEMT 在汲極漏電流定達 1 mA/mm 時崩潰電壓可承受 1622 V，而具源極場板之元件則可達 1962 V。透過對漏電流的分析則可以知道主導崩潰量測的路徑是由閘極(IG)漏電流所主導，且元件具有源極場板可以得到崩潰電壓改善，了解到閘極漏電流是此研究製作之元件的主要缺失。最後進行特徵導通電阻組成的分析，利用目前的製程技術和漏電流為基礎估算歐姆接觸電阻、片電阻以及閘極與汲極距離調整對特徵導通電阻的改善。計算出閘極與汲極距離縮短之狀況下，以閘極漏電流主導之元件，在元件尺寸 LG = 2 μm、Lp-GaN = 4 μm、LGS = 3 μm、LGD = 11 μm 時，漏電流定義達 1 μA/mm 下，RON,sp 則降為 1.35 mΩ·cm2，預期 1200 V 元件可以達到世界水準。 ;The epitaxial layer used in the 1200 V device was grown on a low-resistivity silicon substrate with a p-GaN layer on top of the AlGaN/GaN heterostructure. To achieve a 1200 V blocking voltage and mitigate the lattice mismatch issue between GaN and silicon, a 6.5 μm thick buffer layer with carbon doping was used in the epitaxial structure to enhance vertical insulation. Enhancement-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated on this epitaxial structure, including both conventional p-GaN gate HEMTs and p-GaN gate HEMTs with a source field plate (SFP). Electric field analysis of devices with and without SFP was performed using Silvaco TCAD simulation. In the grounded substrate off-state blocking voltage measurement, the conventional p-GaN gate HEMT (LGD = 20 μm) exhibited a blocking voltage of 1755 V at a drain leakage current of 1 mA/mm, while the device with SFP showed a blocking voltage of 1759 V with RON,sp values of 7.57 mΩ·cm2 and 7.89 mΩ·cm2 , respectively. Analysis of different leakage currents revealed that the primary limitation on blocking voltage came from the vertical substrate (Isub) leakage current. Thus, the source field plate structure, designed to disperse the gate edge electric field, did not improve the blocking voltage. However, in the floating substrate off-state blocking voltage measurement, the conventional p-GaN gate HEMT achieved a blocking voltage of 1622 V at a drain leakage current of 1 mA/mm, while the device with SFP reached 1962 V. Leakage current analysis indicated that blocking was predominantly influenced by the gate (IG) leakage current, and the device with the source field plate exhibited improved blocking voltage. The analysis identified gate leakage current as the main drawback in the fabricated devices. Finally, an analysis of the constituent components of specific on-resistance was conducted, considering current leakage, Ohmic contact resistance, sheet resistance, and gate-to-drain distance adjustments based on current process technology. By shortening the gate-to-drain distance in devices dominated by gate leakage current (LG = 2 μm, Lp-GaN = 4 μm, LGS = 3 μm, LGD = 11 μm, and leakage current defining 1 μA/mm), the specific on-resistance (RON,sp) decreased to 1.35 mΩ·cm2 . This suggests that the 1200 V device can achieve world-class performance.
顯示於類別:	[電機工程研究所] 博碩士論文

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