氮化鎵電晶體在雙脈衝動態量測後之特性分析;Characteristics analysis of GaN HEMTs after double pulse test

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 博碩士論文 > Item 987654321/93141

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/93141

题名:	氮化鎵電晶體在雙脈衝動態量測後之特性分析;Characteristics analysis of GaN HEMTs after double pulse test
作者:	陳威嘉;Chen, Wei-Chia
贡献者:	電機工程學系
关键词:	氮化鎵高電子遷移率電晶體;臨界電壓偏移;雙脈衝量測;捕獲效應;GaN HEMT;threshold voltage shift;double pulse test;trapping effect
日期:	2022-11-15
上传时间:	2024-09-19 16:44:26 (UTC+8)
出版者:	國立中央大學
摘要:	本論文為探討蕭特基p型氮化鎵閘極高電子遷移率電晶體在雙脈衝動態量測的研究，主要分成兩個部分進行討論：(1)分析不同負載以及不同量測條件的雙脈衝動態量測在動態特性上的變化;(2)觀察在不同量測條件的雙脈衝動態量測後對元件所產生的影響以及元件後續的恢復情形。本篇論文使用雙脈衝動態量測對氮化鎵元件進行研究分別進行電感式負載和電阻式負載的雙脈衝動態量測，以接近實際量測電路的雙脈衝動態模擬驗證量測結果，並提出理想的雙脈衝動態電路。為了確認引起震盪的原因，以電感式負載電路針對寄生效應的有無進行模擬，得出轉板寄生效應對模擬的影響。使用不同量測條件進行電阻式負載雙脈衝動態量測，得出不同量測條件使量測波形和動態特性產生的變化，提出波形變化的可能因素，最後得出動態特性出現差異的原因。在進行電阻式負載雙脈衝動態量測後以ID-VGS特性曲線觀察元件的VTH偏移和恢復的情形。再使用不同外部RG和不同關閉VDS、開啟ID的雙脈衝動態量測觀察元件前後的區別，得出不同外部 RG之間不會影響雙脈衝動態量後的特性，並且主導雙脈衝動態量測後產生影響的是關閉VDS。透過變溫加速恢復的方式，搭配阿瑞尼斯圖，得出陷阱的活化能分別為0.20和0.09 eV，再將結果帶入雙脈衝動態模擬，得出雙脈衝動態量測使ID-VGS變化的機制。;In this study, a double pulse test of Schottky p-GaN gate high-electron-mobility transistors has been investigated. Based on the double pulse test, is divided into the following two different sections: (1) Analyzed the changes in dynamic characteristics of the double pulse test with different loads and different measurement conditions, (2) Observed the influence and recovery on the device after a double pulse test with different measurement conditions. In this paper, the double pulse test is used to study the GaN device, the double pulse test of the inductive load and the resistive load is carried out respectively, and verify the measurement results with a double pulse test simulation close to the actual measurement circuit. An ideal double pulse test circuit is proposed. To confirm the cause of the oscillation, the inductive load circuit is used to simulate the with and without parasitic effects, and the influence of the parasitic effect of the PCB on the simulation is obtained. Different measurement conditions are used for the resistive load double pulse test, and the variations of measurement waveform and parameters caused by different measurement conditions are obtained. After the resistive load double pulse test, the VTH shift and recovery of the device were investigated with the ID-VGS characteristic curve. Observe the difference between the devices before and after the double pulse test with different external RG and different VDS,off. It is concluded that different external RG will not affect the characteristics after the double pulse test, but are dominated by VDS,off. Through accelerating the recovery by varying the temperature, with the Arrhenius plot, the activation energies of the traps are obtained to be 0.20 and 0.09 eV respectively, and then the results are used in the double pulse test simulation to obtain the mechanism of the ID-VGS shift caused by the double pulse test.
显示于类别:	[電機工程研究所] 博碩士論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	9	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....