半橋氮化鎵驅動電路和功率電晶體積體化設計和其降壓器應用;A Fully Integrated GaN Half-Bridge IC for Buck Converter

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Title:	半橋氮化鎵驅動電路和功率電晶體積體化設計和其降壓器應用;A Fully Integrated GaN Half-Bridge IC for Buck Converter
Authors:	蔡凱翔;Tsai, Kai-Hsiang
Contributors:	電機工程學系
Keywords:	氮化鎵;閘極驅動器;降壓轉換器;半橋;Gallium Nitride;gate driver;Buck converter;half-bridge
Date:	2023-11-10
Issue Date:	2024-03-05 17:52:01 (UTC+8)
Publisher:	國立中央大學
Abstract:	氮化鎵(GaN)電晶體由於其閘極電荷小，且內部沒有寄生pn 二極體(body diode)，因此可以達到非常快的切換速度與低硬切換損耗，非常適合應用於高壓電源轉換器。隨著氮化鎵製程平台逐漸成熟，水平結構的氮化鎵電晶體能在單一晶片上實現閘極驅動器與功率開關的積體化，從而降低電路的鎊線寄生效應。本篇論文將氮化鎵功率開關與閘極驅動器積體化成半橋(half-bridge)晶片，並利用氮化鎵電晶體反向傳導之特性將自舉開關同時進行積體化。透過分析功率開關切換過程的能量轉換評估半橋晶片的損耗，並透過傳導損耗與輸出電荷(Qoss)之間的權衡選擇功率開關的尺寸，並設計其閘極驅動器，在有足夠的驅動能力下也同時抑制閘極振鈴。最後將此半橋晶片應用於降壓轉換器，此晶片能操作在500 kHz ~ 1 MHz 的切換頻率，在切換頻率為1 MHz 時，可以實現48 V 到24 V 與12 V 的電壓轉換。操作於500 kHz 時可以實現100 V 到48 V 的電壓轉換。在48 V 到24 V 的電壓轉換與0.4 A 的輸出電流下能達到91 %的峰值效率。;Gallium Nitride (GaN) transistors are highly suitable for high-voltage power converters due to their low gate charge and absence of a parasitic pn diode (body diode) within. These characteristics allow for rapid switching speeds and low switching losses, making them ideal for high-voltage power conversion applications. With the maturation of GaN fabrication processes, GaN transistors with lateral structures can be monolithically inte grated on a single chip, combining gate drivers and power switches to reduce circuit parasitics. This paper integrates gallium nitride power switches and gate drivers into a half-bridge chip and utilizes the reverse conduction characteristics of gallium ni tride transistors to integrate the bootstrap switch simultaneously. The losses of the half-bridge chip are evaluated by analyzing the energy conversion during power switch transitions. The sizing of the power switches is chosen through a trade-off between conduction losses and output charge (Qoss ), and their gate drivers are designed to provide sufficient drive capability and suppress gate ringing. Finally, this half-bridge chip is applied to a Buck converter. The chip can operate at switching frequencies between 500 kHz and 1 MHz. At a switching frequency of 1 MHz, it can achieve voltage conversions from 48 V to 24 V and 12 V. When operating at 500 kHz, it can achieve a voltage conversion from 100 V to 48 V. At a voltage conversion from 48 V to 24 V and an output current of 0.4 A, it can achieve a peak efficiency of 91%.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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