近年來，由於微機電系統(Micro Electro Mechanical Systems, MEMS)在各種應用中表現出色，因此對MEMS元件興趣日益增加，MEMS元件通常由多層沉積的薄膜以及不同材料（如矽、金屬、陶瓷材料等）而組成，其中一種設計即為氮化鋁（AlN）材料組成一種由兩層AlN夾在金屬電極之間的雙向性結構，在這種不同材料的堆疊過程中，其中殘留應力在微觀尺度中最為顯著影響製造的元件的性能和可靠性來源之一。因此，在晶圓級別上評估和調節殘留應力在活性層分佈和變化非常重要，也是評估現代MEMS元件性能的關鍵之一。本文研究了物理氣相沉積法製造薄膜過程中產生的殘留應力的原因，介紹了減少殘留應力的可能途徑及表徵殘留應力的技術，並透過有限元素分析不同MEMS結構在各種製造過程中產生的殘留應力對其特性的影響。透過有限元素的分析可以了解MEMS的多種物理場相關的技術領域知識，並提供了半導體製造過程中獲得更好地設計的參考依據。;In recent years, there has been a growing interest in Micro Electro Mechanical Systems (MEMS) due to their remarkable performance across various applications. MEMS devices are typically comprised of multiple layers of deposited thin films and various materials, including silicon, metals, ceramics, and more. One specific design utilizes aluminum nitride (AlN) material to create a bidirectional structure with two AlN layers sandwiched between metal electrodes. During the stacking process of these different materials, residual stress emerges as a significant factor that can significantly impact the performance and reliability of microscale manufactured components. Therefore, it is crucial to evaluate and regulate the residual stress at the wafer level to assess its distribution and variations within the active layer. This assessment is key to evaluating the performance of modern MEMS devices. This study focuses on investigating the causes of residual stress generated during the physical vapor deposition (PVD) process for thin film fabrication. It introduces potential approaches to mitigate residual stress and techniques for characterizing it. Finite element analysis is employed to examine the impact of residual stress on the characteristics of different MEMS structures during various manufacturing processes. Through finite element analysis, a deeper understanding of the various physical field-related aspects of MEMS is gained, providing valuable insights for optimizing designs in semiconductor manufacturing processes.
